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Fabrication of sub-50-nm solid-state nanostructures on the basis of dip-pen nanolithography

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Fabrication of sub-50-nm solid-state nanostructures on the basis of dip-pen nanolithography

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dc.contributor.author Zhang, Hua
dc.contributor.author Chung, Sung-Wook
dc.contributor.author Mirkin, Chad A.
dc.date.accessioned 2012-09-19T07:50:13Z
dc.date.available 2012-09-19T07:50:13Z
dc.date.copyright 2003
dc.date.issued 2012-09-19
dc.identifier.citation Zhang, H., Chung, S. W., & Mirkin, C. A. (2003). Fabrication of sub-50-nm solid-state nanostructures on the basis of dip-pen nanolithography. Nano Letters, 3(1), 43-45.
dc.identifier.issn 1530-6984
dc.identifier.uri http://hdl.handle.net/10220/8574
dc.description.abstract The fabrication of arrays of sub-50-nm gold dots and line structures with deliberately designed 12−100-nm gaps is reported. These structures were made by initially using dip-pen nanolithography to pattern the etch resist, 16-mercaptohexadecanoic acid, on Au/Ti/SiOx/Si substrates and then using wet-chemical etching to remove the exposed gold.
dc.language.iso en
dc.relation.ispartofseries Nano letters
dc.rights © 2003 American Chemical Society.
dc.subject DRNTU::Engineering::Materials.
dc.title Fabrication of sub-50-nm solid-state nanostructures on the basis of dip-pen nanolithography
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1021/nl0258473

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