| dc.contributor.author |
Zhang, Hua. |
| dc.contributor.author |
Amro, Nabil A. |
| dc.contributor.author |
Disawal, Sandeep. |
| dc.contributor.author |
Elghanian, Robert. |
| dc.contributor.author |
Shile, Roger. |
| dc.contributor.author |
Fragala, Joseph. |
| dc.date.accessioned |
2012-09-24T03:56:47Z |
| dc.date.available |
2012-09-24T03:56:47Z |
| dc.date.copyright |
2007 |
| dc.date.issued |
2012-09-24 |
| dc.identifier.citation |
Zhang, H., Amro, N. A., Disawal, S., Elghanian, R., Shile, R., & Fragala, J. (2007). High-throughput dip-pen-nanolithography-based fabrication of Si nanostructures. Small, 3(1), 81-85. |
| dc.identifier.issn |
1613-6829 |
| dc.identifier.uri |
http://hdl.handle.net/10220/8613 |
| dc.description.abstract |
Si nanostructures: A new method for fabricating large-area Si nanostructures in a high-throughput fashion has been demonstrated. The procedure is based upon dip-pen nanolithography in combination with wet-chemical etching and reactive ion etching. Multipen techniques have been demonstrated for the fabrication of large-area Si nanostructure arrays (see AFM image; dot 1: diameter/height=1460/140 nm; dot 9: diameter/height=385/75 nm). |
| dc.language.iso |
en |
| dc.relation.ispartofseries |
Small |
| dc.rights |
© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |
| dc.subject |
DRNTU::Engineering::Materials. |
| dc.title |
High-throughput dip-pen-nanolithography-based fabrication of Si nanostructures. |
| dc.type |
Journal Article |
| dc.contributor.school |
School of Materials Science and Engineering |
| dc.identifier.doi |
http://dx.doi.org/10.1002/smll.200600393 |
