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High-throughput dip-pen-nanolithography-based fabrication of Si nanostructures.

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High-throughput dip-pen-nanolithography-based fabrication of Si nanostructures.

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dc.contributor.author Zhang, Hua.
dc.contributor.author Amro, Nabil A.
dc.contributor.author Disawal, Sandeep.
dc.contributor.author Elghanian, Robert.
dc.contributor.author Shile, Roger.
dc.contributor.author Fragala, Joseph.
dc.date.accessioned 2012-09-24T03:56:47Z
dc.date.available 2012-09-24T03:56:47Z
dc.date.copyright 2007
dc.date.issued 2012-09-24
dc.identifier.citation Zhang, H., Amro, N. A., Disawal, S., Elghanian, R., Shile, R., & Fragala, J. (2007). High-throughput dip-pen-nanolithography-based fabrication of Si nanostructures. Small, 3(1), 81-85.
dc.identifier.issn 1613-6829
dc.identifier.uri http://hdl.handle.net/10220/8613
dc.description.abstract Si nanostructures: A new method for fabricating large-area Si nanostructures in a high-throughput fashion has been demonstrated. The procedure is based upon dip-pen nanolithography in combination with wet-chemical etching and reactive ion etching. Multipen techniques have been demonstrated for the fabrication of large-area Si nanostructure arrays (see AFM image; dot 1: diameter/height=1460/140 nm; dot 9: diameter/height=385/75 nm).
dc.language.iso en
dc.relation.ispartofseries Small
dc.rights © 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
dc.subject DRNTU::Engineering::Materials.
dc.title High-throughput dip-pen-nanolithography-based fabrication of Si nanostructures.
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1002/smll.200600393

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