Thermal reaction of nickel and Si0.75Ge0.25 alloy.

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Thermal reaction of nickel and Si0.75Ge0.25 alloy.

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dc.contributor.author Pey, Kin Leong.
dc.contributor.author Choi, W. K.
dc.contributor.author Chattopadhyay, Sujay.
dc.contributor.author Zhao, H. B.
dc.contributor.author Fitzgerald, Eugene A.
dc.contributor.author Antoniadis, D. A.
dc.contributor.author Lee, Pooi See.
dc.date.accessioned 2012-09-25T04:10:29Z
dc.date.available 2012-09-25T04:10:29Z
dc.date.copyright 2002
dc.date.issued 2012-09-25
dc.identifier.citation Pey, K. L., Choi, W. K., Chattopadhyay, S., Zhao, H. B., Fitzgerald, E. A., Antoniadis, D. A., et al (2002). Thermal reaction of nickel and Si0.75Ge0.25 alloy. Journal of Vacuum Science & Technology A, 20(6), 1903.
dc.identifier.issn 0734-2101
dc.identifier.uri http://hdl.handle.net/10220/8633
dc.description.abstract The interfacial reactions and chemical phase formation between nickel and ultrahigh vacuum chemical vapor deposited Si0.75Ge0.25 alloy have been studied within the temperature range of 300–900 °C for forming low resistive and uniform silicide films for future application in SiGe based metal–oxide–semiconductor field effect transistor devices. The silicided films were characterized by the x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, transmission electron microscopy, and micro-Raman microscopy techniques. Smooth and uniform nickel monogermanosilicide NiSi0.75Ge0.25 films have been observed for samples annealed at around 400–500 °C. For annealing temperatures of 500 °C and above, Ge-rich Si1−zGez grains where z>0.25 were found among Ge deficient Niy(SiwGe1−w)1−y grains where w<0.25 and the Niy(Si1−wGew)1−y phase is thermally stable up to an annealing temperature of 800 °C. We found that the Ni/SiGe reaction is mainly diffusion controlled with Ge and Ni as the dominant diffusing species compared to Si during the annealing process. In addition, Ge has been found to promote agglomeration especially above 700 °C, leading to an abrupt increase in the sheet resistance.
dc.language.iso en
dc.relation.ispartofseries Journal of vacuum science & technology A
dc.rights © 2002 American Vacuum Society. This paper was published in Journal of Vacuum Science & Technology A and is made available as an electronic reprint (preprint) with permission of American Vacuum Society. The paper can be found at DOI: [http://dx.doi.org/10.1116/1.1507339]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
dc.subject DRNTU::Engineering::Materials.
dc.title Thermal reaction of nickel and Si0.75Ge0.25 alloy.
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1116/1.1507339
dc.description.version Published version

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