Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/3532
Title: | Fabrication and characterization of AlGaAs/GaAs pseudomorphic high electron mobility transistors for power applications | Authors: | Tan, Chee Leong | Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Power electronics | Issue Date: | 2008 | Source: | Tan, C. L. (2008). Fabrication and characterization of AlGaAs/GaAs pseudomorphic high electron mobility transistors for power applications. Doctoral thesis, Nanyang Technological University, Singapore. | Abstract: | A robust process technology using optical and electron beam lithography has been developed for 0.25 µm gate length AlGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs). These devices, for power applications at microwave frequencies, demonstrated a high gate-drain breakdown voltage and a high drain current. In-depth studies have been conducted to investigate issues related to the surface trapping and hot carrier induced degradation in BCB-passivated devices. The drain current transient technique reveals that BCB reduces the density of surface states compared to unpassivated PHEMTs. Hot carrier stress tests indicate that dc degradation under high gate-drain field is due to trapping of hot electrons in states within the BCB and/or at the interface between the semiconductor and the BCB in the gate-drain access region. For the SiN-passivated devices, it is due to the trapping of holes in the AlGaAs Schottky layer underneath the gate and in the thin oxide interface layer between the gate metal and the AlGaAs surface. The PHEMT technology developed was also extended to the design and fabrication of C-X-Ku broadband and Ku-band power amplifier MMICs. | URI: | https://hdl.handle.net/10356/3532 | DOI: | 10.32657/10356/3532 | Schools: | School of Electrical and Electronic Engineering | Rights: | Nanyang Technological University | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | EEE Theses |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
EEE-THESES_1385.pdf | 3.93 MB | Adobe PDF | View/Open |
Page view(s) 20
671
Updated on Mar 28, 2024
Download(s) 1
1,180
Updated on Mar 28, 2024
Google ScholarTM
Check
Altmetric
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.