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https://hdl.handle.net/10356/4075
Title: | MOCVD growth of III-V compounds for long wavelength optoelectronic devices | Authors: | Zhu, Jingyi | Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics | Issue Date: | 2005 | Source: | Zhu, J. (2005). MOCVD growth of III-V compounds for long wavelength optoelectronic devices. Master’s thesis, Nanyang Technological University, Singapore. | Abstract: | Metal-Organic Chemical Vapour Deposition (MOCVD) growth of InP based III-V semiconductor materials for long-wavelength semiconductor lasers have been studied in detail. With tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) as group V precursors and N2 as carrier gas, high quality InP based III-V semiconductor alloys and quantum well (QW) structures have been grown by using MOCVD technology. | URI: | https://hdl.handle.net/10356/4075 | DOI: | 10.32657/10356/4075 | Schools: | School of Electrical and Electronic Engineering | Rights: | Nanyang Technological University | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | EEE Theses |
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File | Description | Size | Format | |
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EEE-THESES_1874.pdf | 2.53 MB | Adobe PDF | View/Open |
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