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https://hdl.handle.net/10356/4294
Title: | Determination of carrier lifetime in power semiconductor devices | Authors: | Goh, Chee Hiong. | Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors | Issue Date: | 2003 | Abstract: | In this project, a comparative study on the three ramp reverse recovery methods and Open Circuit Voltage Decay (ECVD) will be carried out to the P+NN+ power diode with a uniform lifetime profile and a non-uniform lifetime profile using simulations done by the Medici Numerical Simulator. The importance of considering a non-uniform lifetime profile is to suit the new fabrication techniques. | URI: | http://hdl.handle.net/10356/4294 | Schools: | School of Electrical and Electronic Engineering | Rights: | Nanyang Technological University | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
Appears in Collections: | EEE Theses |
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File | Description | Size | Format | |
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EEE-THESES_343.pdf Restricted Access | 11.26 MB | Adobe PDF | View/Open |
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