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https://hdl.handle.net/10356/46613
Title: | Investigation of the spectral and electrical accelerated degradation characteristics of semiconductor injection lasers grown by molecular beam epitaxy | Authors: | Yoon, Soon-Fatt. | Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors | Issue Date: | 1996 | Abstract: | Subsequent to fabrication, double-heterostructure laser diodes with planar GalnAsP active regions are subjected to an annealing or burn-in process during which they are operated at a constant 5 mW light-output power at a temperature of 50°C. In general, small increases of drive current are found in the first 1000 to 2000 h of operation after which the lasers settle down. In the present diodes, drive current increases of typically 6% occurred. There is little change in threshold current and the changes seen are mainly due to a decrease in slope efficiency. In all cases the changes decrease gradually after about 2000 h and revert to the behavior expected of long lived and reliable quaternary lasers. | Description: | 52 p. | URI: | http://hdl.handle.net/10356/46613 | Schools: | School of Electrical and Electronic Engineering | Rights: | Nanyang Technological University | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
Appears in Collections: | EEE Research Reports (Staff & Graduate Students) |
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File | Description | Size | Format | |
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EEE_RESEARCH_REPORTS_32.pdf Restricted Access | 5.84 MB | Adobe PDF | View/Open |
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