Browsing by Author Ang, Diing Shenp

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Issue DateTitleAuthor(s)
2013Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulatorBera, L. K.; Tham, W. H.; Kajen, R. S.; Dolmanan, S. B.; Kumar, M. Krishna; Lin, Vivian Kaixin; Ang, Diing Shenp; Bhat, T. N.; Yakovlev, N.; Tripathy, Sudhiranjan
2015Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructureDuan, Tian Li; Pan, Ji Sheng; Ang, Diing Shenp
2013Electron trap transformation under positive-bias temperature stressingGao, Yuan; Ang, Diing Shenp; Bersuker, G.; Young, C. D.
2016Enhanced stability of complementary resistance switching in the TiN/HfOx/TiN resistive random access memory device via interface engineeringAng, Diing Shenp; Zhang, H. Z.; Yew, K. S.; Wang, X. P.
2017Enlarged read window in the asymmetric ITO/HfOx/TiN complementary resistive switchZhang, H. Z.; Ang, Diing Shenp; Zhou, Yu; Wang, Xin Peng
 2012Evidence for the transformation of switching hole traps into permanent bulk traps under negative-bias temperature stressing of high-k P-MOSFETsGao, Yuan; Ang, Diing Shenp; Young, C. D.; Bersuker, G.
 2012Evolution of hole trapping in the oxynitride gate p-MOSFET subjected to negative-bias temperature stressingBoo, A. A.; Ang, Diing Shenp
2018First principle investigation of electronic transport properties of the edge shaped graphene-porphine molecular junction deviceKole, Abhisek; Ang, Diing Shenp
2016Gold-free contacts on Al x Ga 1-x N/GaN high electron mobility transistor structure grown on a 200-mm diameter Si(111) substrateTham, Wai Hoe; Ang, Diing Shenp; Bera, Lakshmi Kanta; Surani Bin Doimanan; Bhat, Thirumaleshwara N.; Kajen, Rasanayagam S.; Tan, Hui Ru; Teo, Siew Lang; Tripathy, Sudhiranjan
2020Highly transparent ITO/HfO2/ITO device for visible-light sensingKalaga, Pranav Sairam; Kumar, Dayanand; Ang, Diing Shenp; Tsakadze, Zviad
2013Impact of Lanthanum on positive-bias temperature instability - insight from first-principles simulationGu, Chen Jie; Ang, Diing Shenp
2016Impact of voltage-accelerated stress on hole trapping at operating conditionTung, Zhi Yan; Ang, Diing Shenp
2019Inducing alternating nanoscale rectification in a dielectric material for bidirectional-trigger artificial synapsesBerco, Dan; Ang, Diing Shenp
2013Interfacial chemistry and valence band offset between GaN and Al2O3 studied by X-ray photoelectron spectroscopyDuan, T. L.; Pan, J. S.; Ang, Diing Shenp
2018Interfacial chemistry study of GaN by trimethylaluminum-only cycles and X-ray photoelectron spectroscopyAng, Diing Shenp; Gu, C. J.; Duan, T. L.; Pan, J. S.
 2012The link between NBTI and TDDB of high-k gate P-MOSFETsGao, Yuan; Ang, Diing Shenp
 2018Nanoscale conductive filament with alternating rectification as an artificial synapse building blockBerco, Dan; Zhou, Yu; Gollu, Sankara Rao; Kalaga, Pranav Sairam; Kole, Abhisek; Mohamed Hassan; Ang, Diing Shenp
2013Negative-bias temperature instability – insight from recent dynamic stress experimentsAng, Diing Shenp; Boo, A. A.; Gao, Yuan
 2013A new method for enhancing high- k /metal-gate stack performance and reliability for high- k last integrationYew, K. S.; Tang, L. J.; Ang, Diing Shenp
2016New observations on the correlation between hole-trapping transformation and SILC generation under NBTI stressingBoo, Ann Ann; Tung, Zhi Yan; Ang, Diing Shenp