Browsing by Author
Chen, B.
Showing results 1 to 3 of 3
| Issue Date | Title | Author(s) |
| | 2012 | Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect | Gao, Bin; Yu, Hongyu; Lu, Y.; Chen, B.; Fang, Z.; Fu, Y. H.; Yang, J. Q.; Liu, L. F.; Liu, X. Y.; Kang, J. F. |
| | 2012 | Microscopic mechanism for unipolar resistive switching behaviour of nickel oxides | Chen, Y. S.; Kang, J. F.; Chen, B.; Liu, L. F.; Liu, X. Y.; Wang, Y. Y.; Wu, L.; Wang, J. Y.; Chen, Q.; Wang, E. G.; Gao, Bin; Yu, Hongyu |
| | 2012 | Oxide-based RRAM : a novel defect-engineering-based implementation for multilevel data storage | Gao, Bin; Yu, Hongyu; Kang, J. F.; Chen, B.; Liu, L. F.; Liu, X. Y.; Wang, Z. R.; Yu, B. |
