Browsing by Author Fan, Weijun


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Issue DateTitleAuthor(s)
2006Different temperature and pressure behavior of band edge and N-cluster emissions in GaAs0.973Sb0.022N0.005Ding, K.; Wicaksono, Satrio; Ma, B. S.; Su, F. H.; Wang, W. J.; Li, G. H.; Yoon, Soon Fatt; Fan, Weijun
2022Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strainBurt, Daniel; Joo, Hyo-Jun; Kim, Youngmin; Jung, Yongduck; Chen, Melvina; Luo, Manlin; Kang, Dong-Ho; Assali, Simone; Zhang, Lin; Son, Bongkwon; Fan, Weijun; Moutanabbir, Oussama; Ikonic, Zoran; Tan, Chuan Seng; Huang, Yi-Chiau; Nam, Donguk
2002Effect of In and N incorporation on the properties of lattice-matched GaInNAs/GaAs grown by radio frequency plasma-assisted solid-source molecular beam epitaxyLoke, Wan Khai; Yoon, Soon Fatt; Ng, T. K.; Wang, S. Z.; Fan, Weijun
 2018Effect of size and shape on electronic and optical properties of CdSe quantum dotsLiu, Yincheng; Bose, Sumanta; Fan, Weijun
 2020Effect of size on the electronic structure and optical properties of cubic CsPbBr₃ quantum dotsChen, Qiran; Song, Zhigang; Zhang, Daohua; Sun, Handong; Fan, Weijun
 2021Effect of thickness on the electronic structure and optical properties of quasi two-dimensional perovskite CsPbBr₃ nanoplateletsChen, Qiran; Wang, Zhaojin; Song, Zhigang; Fan, Weijun; Wang, Kai; Kim, Munho; Zhang, Dao Hua
1998Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dotsXu, S. J.; Wang, X. C.; Chua, S. J.; Wang, C. H.; Fan, Weijun; Jiang, J.; Xie, X. G.
2006Effects of size and shape on electronic states of quantum dotsNgo, C.; Yoon, S.; Chua, S.; Fan, Weijun
2003Effects of tensile strain in barrier on optical gain spectra of GaInNAs/GaAsN quantum wellsFan, Weijun; Ng, S. T.; Yoon, Soon Fatt; Li, M. F.; Chong, T. C.
2007Electric field tunable electron g factor and high asymmetrical Stark effect in InAs[sub 1−x]N[sub x] quantum dotsFan, Weijun; Xia, Jian-Bai; Li, S. S.; Zhang, X. W.
2012Electronic band structure and effective mass parameters of Ge1−xSnx alloysLow, Kain Lu; Yang, Yue; Han, Genquan; Fan, Weijun; Yeo, Yee-Chia
2009Electronic structure and optical gain saturation of InAs[sub 1−x]N[sub x]/GaAs quantum dotsZhang, X. W.; Chen, J.; Xu, Q.; Li, S. S.; Fan, Weijun; Xia, Jian-Bai
1989Electronic structures of superlattices under in-plane magnetic fieldXia, Jian-Bai; Fan, Weijun
2007GaAs/AlAs/AlGaAs quantum well infrared photodetectorFan, Weijun
2007GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μmMa, B. S.; Fan, Weijun; Dang, Y. X.; Cheah, Weng Kwong; Loke, Wan Khai; Liu, W.; Li, D. S.; Yoon, Soon Fatt; Zhang, Dao Hua; Wang, H.; Tung, Chih Hang
2021GeSn-on-insulator dual-waveband resonant-cavity-enhanced photodetectors at the 2 μm and 155 μm optical communication bandsChen, Qimiao; Wu, Shaoteng; Zhang, Lin; Burt, Daniel; Zhou, Hao; Nam, Donguk; Fan, Weijun; Tan, Chuan Seng
 2020GeSn/GaAs hetero-structure by magnetron sputteringQian, Li; Tong, Jinchao; Suo, Fei; Liu, Lin; Fan, Weijun; Luo, Yu; Zhang, Dao Hua
 2021Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire widthKang, Yuye; Xu, Shengqiang; Han, Kaizhen; Kong, Eugene Y.-J.; Song, Zhigang; Luo, Sheng; Kumar, Annie; Wang, Chengkuan; Fan, Weijun; Liang, Gengchiau; Gong, Xiao
2007Giant and zero electron g factors of dilute nitride semiconductor nanowiresZhang, X. W.; Li, S. S.; Fan, Weijun; Xia, Jian-Bai
2005Growth of p-type GaAs∕AlGaAs(111) quantum well infrared photodetector using solid source molecular-beam epitaxyLi, H.; Mei, T.; Karunasiri, G.; Yuan, K. H.; Fan, Weijun; Zhang, Dao Hua; Yoon, Soon Fatt