Showing results 24 to 43 of 100
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| Issue Date | Title | Author(s) |
| 2018 | Effect of size and shape on electronic and optical properties of CdSe quantum dots | Liu, Yincheng; Bose, Sumanta; Fan, Weijun |
| 2020 | Effect of size on the electronic structure and optical properties of cubic CsPbBr₃ quantum dots | Chen, Qiran; Song, Zhigang; Zhang, Daohua; Sun, Handong; Fan, Weijun |
| 2021 | Effect of thickness on the electronic structure and optical properties of quasi two-dimensional perovskite CsPbBr₃ nanoplatelets | Chen, Qiran; Wang, Zhaojin; Song, Zhigang; Fan, Weijun; Wang, Kai; Kim, Munho; Zhang, Dao Hua |
| 1998 | Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dots | Xu, S. J.; Wang, X. C.; Chua, S. J.; Wang, C. H.; Fan, Weijun; Jiang, J.; Xie, X. G. |
| 2006 | Effects of size and shape on electronic states of quantum dots | Ngo, C.; Yoon, S.; Chua, S.; Fan, Weijun |
| 2003 | Effects of tensile strain in barrier on optical gain spectra of GaInNAs/GaAsN quantum wells | Fan, Weijun; Ng, S. T.; Yoon, Soon Fatt; Li, M. F.; Chong, T. C. |
| 2007 | Electric field tunable electron g factor and high asymmetrical Stark effect in InAs[sub 1−x]N[sub x] quantum dots | Fan, Weijun; Xia, Jian-Bai; Li, S. S.; Zhang, X. W. |
| 2023 | Electric-field-induced semiconductor-semimetal phase transition of GeTe/SnSe van der Waals heterojunction | Du, Jingxue; Yang, Jing; Fan, Weijun; Shi, Lijie |
| 2012 | Electronic band structure and effective mass parameters of Ge1−xSnx alloys | Low, Kain Lu; Yang, Yue; Han, Genquan; Fan, Weijun; Yeo, Yee-Chia |
| 2009 | Electronic structure and optical gain saturation of InAs[sub 1−x]N[sub x]/GaAs quantum dots | Zhang, X. W.; Chen, J.; Xu, Q.; Li, S. S.; Fan, Weijun; Xia, Jian-Bai |
| 1989 | Electronic structures of superlattices under in-plane magnetic field | Xia, Jian-Bai; Fan, Weijun |
| 2023 | Enhanced light emission of germanium light-emitting-diode on 150 mm Germanium-on-Insulator (GOI) | Wu, Shaoteng; Wang, Zhaozhen; Zhang, Lin; Chen, Qimiao; Wen, shuyu; Lee, Kwang Hong; Bao, shuyu; Fan, Weijun; Tan, Chuan Seng; Luo, Jun-Wei |
| 2023 | Enhancing quantum synchronization through homodyne measurement, noise, and squeezing | Shen, Yuan; Soh, Hong Yi; Fan, Weijun; Kwek, Leong Chuan |
| 2023 | Fisher information as general metrics of quantum synchronization | Shen, Yuan; Soh, Hong Yi; Kwek, Leong Chuan; Fan, Weijun |
| 2007 | GaAs/AlAs/AlGaAs quantum well infrared photodetector | Fan, Weijun |
| 2007 | GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm | Ma, B. S.; Fan, Weijun; Dang, Y. X.; Cheah, Weng Kwong; Loke, Wan Khai; Liu, W.; Li, D. S.; Yoon, Soon Fatt; Zhang, Dao Hua; Wang, H.; Tung, Chih Hang |
| 2021 | GeSn-on-insulator dual-waveband resonant-cavity-enhanced photodetectors at the 2 μm and 155 μm optical communication bands | Chen, Qimiao; Wu, Shaoteng; Zhang, Lin; Burt, Daniel; Zhou, Hao; Nam, Donguk; Fan, Weijun; Tan, Chuan Seng |
| 2020 | GeSn/GaAs hetero-structure by magnetron sputtering | Qian, Li; Tong, Jinchao; Suo, Fei; Liu, Lin; Fan, Weijun; Luo, Yu; Zhang, Dao Hua |
| 2023 | GeSn/Ge multiquantum-well vertical-cavity surface-emitting p-i-n structures and diode emitters on a 200 mm Ge-on-insulator platform | Chen, Qimiao; Jung, Yongduck; Zhou, Hao; Wu, Shaoteng; Gong, Xiao; Huang, Yi-Chiau; Lee, Kwang Hong; Zhang, Lin; Nam, Donguk; Liu, Jian; Luo, Jun-Wei; Fan, Weijun; Tan, Chuan Seng |
| 2021 | Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width | Kang, Yuye; Xu, Shengqiang; Han, Kaizhen; Kong, Eugene Y.-J.; Song, Zhigang; Luo, Sheng; Kumar, Annie; Wang, Chengkuan; Fan, Weijun; Liang, Gengchiau; Gong, Xiao |