Browsing by Author Fan, Weijun

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Issue DateTitleAuthor(s)
1998Characteristics of InGaAs quantum dot infrared photodetectorsXu, S. J.; Chua, S. J.; Mei, T.; Wang, X. C.; Zhang, X. H.; Karunasiri, G.; Fan, Weijun; Wang, C. H.; Jiang, J.; Wang, S.; Xie, X. G.
2015Comparative analysis of opto-electronic performance of aluminium and silver nanoporous and nano-wired layersMarus, Mikita; Hubarevich, Aliaksandr; Wang, Hong; Mukha, Yauhen; Smirnov, Aliaksandr; Huang, Hui; Sun, Xiao Wei; Fan, Weijun
2005Comparison of electronic band structure and optical transparency conditions of InxGa1−xAs1−yNy∕GaAs quantum wells calculated by 10-band, 8-band, and 6-band k∙p modelsNg, S.; Dang, Y.; Yoon, S.; Fan, Weijun
2002Comparison of nitrogen compositions in the as-grown GaN[sub x]As[sub 1−x] on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopyFan, Weijun; Yoon, Soon Fatt; Ng, T. K.; Wang, S. Z.; Loke, Wan Khai; Liu, R.; Wee, A.
2007Design of In[sub x]Ga[sub 1−x]As[sub 1−y]N[sub y]∕AlAs quantum cascade structures for 3.4 μm intersubband emissionDang, Y. X.; Fan, Weijun
2016Design, simulations, and optimizations of mid-infrared multiple quantum well LEDsDing, Ying; Meriggi, Laura; Steer, Matthew; Fan, Weijun; Bulashevich, Kirill; Thayne, Iain; Macgregor, Calum; Ironside, Charlie; Sorel, Marc
2006Different temperature and pressure behavior of band edge and N-cluster emissions in GaAs0.973Sb0.022N0.005Ding, K.; Wicaksono, Satrio; Ma, B. S.; Su, F. H.; Wang, W. J.; Li, G. H.; Yoon, Soon Fatt; Fan, Weijun
2002Effect of In and N incorporation on the properties of lattice-matched GaInNAs/GaAs grown by radio frequency plasma-assisted solid-source molecular beam epitaxyLoke, Wan Khai; Yoon, Soon Fatt; Ng, T. K.; Wang, S. Z.; Fan, Weijun
 2018Effect of size and shape on electronic and optical properties of CdSe quantum dotsLiu, Yincheng; Bose, Sumanta; Fan, Weijun
1998Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dotsXu, S. J.; Wang, X. C.; Chua, S. J.; Wang, C. H.; Fan, Weijun; Jiang, J.; Xie, X. G.
2006Effects of size and shape on electronic states of quantum dotsNgo, C.; Yoon, S.; Chua, S.; Fan, Weijun
2003Effects of tensile strain in barrier on optical gain spectra of GaInNAs/GaAsN quantum wellsFan, Weijun; Ng, S. T.; Yoon, Soon Fatt; Li, M. F.; Chong, T. C.
2007Electric field tunable electron g factor and high asymmetrical Stark effect in InAs[sub 1−x]N[sub x] quantum dotsFan, Weijun; Xia, Jian-Bai; Li, S. S.; Zhang, X. W.
2012Electronic band structure and effective mass parameters of Ge1−xSnx alloysLow, Kain Lu; Yang, Yue; Han, Genquan; Fan, Weijun; Yeo, Yee-Chia
2009Electronic structure and optical gain saturation of InAs[sub 1−x]N[sub x]/GaAs quantum dotsZhang, X. W.; Chen, J.; Xu, Q.; Li, S. S.; Fan, Weijun; Xia, Jian-Bai
1989Electronic structures of superlattices under in-plane magnetic fieldXia, Jian-Bai; Fan, Weijun
2007GaAs/AlAs/AlGaAs quantum well infrared photodetectorFan, Weijun
2007GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μmMa, B. S.; Fan, Weijun; Dang, Y. X.; Cheah, Weng Kwong; Loke, Wan Khai; Liu, W.; Li, D. S.; Yoon, Soon Fatt; Zhang, Dao Hua; Wang, H.; Tung, Chih Hang
2007Giant and zero electron g factors of dilute nitride semiconductor nanowiresZhang, X. W.; Li, S. S.; Fan, Weijun; Xia, Jian-Bai
2005Growth of p-type GaAs∕AlGaAs(111) quantum well infrared photodetector using solid source molecular-beam epitaxyLi, H.; Mei, T.; Karunasiri, G.; Yuan, K. H.; Fan, Weijun; Zhang, Dao Hua; Yoon, Soon Fatt