Browsing by Author Fitzgerald, Eugene A.


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Showing results 5 to 24 of 24 < previous 
Issue DateTitleAuthor(s)
2015Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambientLee, Kwang Hong; Bao, Shuyu; Chong, Gang Yih; Tan, Yew Heng; Fitzgerald, Eugene A.; Tan, Chuan Seng
2014Fabrication and characterization of germanium-on-insulator through epitaxy, bonding, and layer transferLee, Kwang Hong; Bao, Shuyu; Chong, Gang Yih; Tan, Yew Heng; Fitzgerald, Eugene A.; Tan, Chuan Seng
2018A fully integrated Class-J GaN MMIC power amplifier for 5-GHz WLAN 802.11ax applicationLiu, Bei; Mao, Mengda; Boon, Chirn Chye; Choi, Pilsoon; Khanna, Devrishi; Fitzgerald, Eugene A.
2013Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) chamberFitzgerald, Eugene A.; Lee, Kwang Hong; Jandl, Adam; Tan, Yew Heng; Tan, Chuan Seng
2017Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applicationsLee, Kwang Hong; Bao, Shuyu; Lin, Yiding; Wang, Yue; Li, Wei; Zhang, Lin; Michel, Jurgen; Fitzgerald, Eugene A.; Tan, Chuan Seng; Anantha, P.
2020High-frequency characteristics of InGaP/GaAs double heterojunction bipolar transistor epitaxially grown on 200 mm Ge/Si wafersLoke, Wan Khai; Wang, Yue; Lee, Kwang Hong; Liu, Zhihong; Xie, Hanlin; Chiah, Siau Ben; Lee, Kenneth Eng Kian; Zhou, Xing; Tan, Chuan Seng; Ng, Geok Ing; Fitzgerald, Eugene A.; Yoon, Soon Fatt
2018A highly efficient fully integrated GaN power amplifier for 5-GHz WLAN 802.11ac applicationLiu, Bei; Mao, Mengda; Khanna, Devrishi; Choi, Pilsoon; Boon, Chirn Chye; Fitzgerald, Eugene A.
 2011InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrates (GeOI) using molecular beam epitaxyFitzgerald, Eugene A.; Liang, Y. Y.; Ngo, C. Y.; Yoon, Soon Fatt; Loke, Wan Khai
2017The integration of InGaP LEDs with CMOS on 200 mm silicon wafersWang, Bing; Lee, Kwang Hong; Wang, Cong; Wang, Yue; Made, Riko I.; Sasangka, Wardhana Aji; Nguyen, Viet Cuong; Lee, Kenneth Eng Kian; Tan, Chuan Seng; Yoon, Soon Fatt; Fitzgerald, Eugene A.; Michel, Jurgen
2002Interfacial reacions of Ni on Si1-xGex (x=0.2, 0.3) at low temperature by rapid thermal annealingPey, Kin Leong; Chattopadhyay, Sujay; Lee, Pooi See; Zhao, H. B.; Choi, W. K.; Antoniadis, D. A.; Fitzgerald, Eugene A.
2013Low temperature direct wafer bonding of GaAs to Si via plasma activationXu, D. W.; Fitzgerald, Eugene A.; Yeo, Chiew Yong; Yoon, Soon Fatt
2017Low-threshold optically pumped lasing in highly strained germanium nanowiresBao, Shuyu; Kim, Daeik; Onwukaeme, Chibuzo; Gupta, Shashank; Saraswat, Krishna; Lee, Kwang Hong; Kim, Yeji; Min, Dabin; Jung, Yongduck; Qiu, Haodong; Wang, Hong; Fitzgerald, Eugene A.; Tan, Chuan Seng; Nam, Donguk
 2018MOCVD growth of InGaP/GaAs heterojunction bipolar transistors on 200 mm Si wafers for heterogeneous integration with Si CMOSLoke, Wan Khai; Lee, Kwang Hong; Wang, Yue; Tan, Chuan Seng; Fitzgerald, Eugene A.; Yoon, Soon Fatt
2017Monolithic integration of Si-CMOS and III-V-on-Si through direct wafer bonding processLee, Kwang Hong; Wang, Yue; Wang, Bing; Zhang, Li; Sasangka, Wardhana Aji; Goh, Shuh Chin; Bao, Shuyu; Lee, Kenneth E.; Fitzgerald, Eugene A.; Tan, Chuan Seng
2017A novel 2.6–6.4 GHz highly integrated broadband GaN power amplifierLiu, Bei; Mao, Mengda; Khanna, Devrishi; Boon, Chirn-Chye; Choi, Pilsoon; Fitzgerald, Eugene A.
 2018Performance of AlGaInP LEDs on silicon substrates through low threading dislocation density (TDD) germanium buffer layerWang, Yue; Wang, Bing; Eow, Desmond Fu Shen; Michel, Jurgen; Lee, Kenneth Eng Kian; Yoon, Soon Fatt; Fitzgerald, Eugene A.; Tan , Chuan Seng; Lee, Kwang Hong
2016Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substratesWang, Bing; Wang, Cong; Lee, Kwang Hong; Bao, Shuyu; Lee, Kenneth Eng Kian; Tan, Chuan Seng; Yoon, Soon Fatt; Fitzgerald, Eugene A.; Michel, Jurgen
2016Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layerLee, Kwang Hong; Bao, Shuyu; Wang, Bing; Wang, Cong; Yoon, Soon Fatt; Michel, Jurgen; Fitzgerald, Eugene A.; Tan, Chuan Seng
2018Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layerLee, Kwang Hong; Bao, Shuyu; Wang, Yue; Fitzgerald, Eugene A.; Tan, Chuan Seng
2002Thermal reaction of nickel and Si0.75Ge0.25 alloyPey, Kin Leong; Chattopadhyay, Sujay; Lee, Pooi See; Choi, W. K.; Zhao, H. B.; Antoniadis, D. A.; Fitzgerald, Eugene A.