Browsing by Author
Kang, J. F.
Showing results 1 to 4 of 4
| Issue Date | Title | Author(s) |
| | 2012 | Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect | Gao, Bin; Yu, Hongyu; Lu, Y.; Chen, B.; Fang, Z.; Fu, Y. H.; Yang, J. Q.; Liu, L. F.; Liu, X. Y.; Kang, J. F. |
| | 2012 | Microscopic mechanism for unipolar resistive switching behaviour of nickel oxides | Chen, Y. S.; Kang, J. F.; Chen, B.; Liu, L. F.; Liu, X. Y.; Wang, Y. Y.; Wu, L.; Wang, J. Y.; Chen, Q.; Wang, E. G.; Gao, Bin; Yu, Hongyu |
| | 2012 | Oxide-based RRAM : a novel defect-engineering-based implementation for multilevel data storage | Gao, Bin; Yu, Hongyu; Kang, J. F.; Chen, B.; Liu, L. F.; Liu, X. Y.; Wang, Z. R.; Yu, B. |
| | 2012 | A self-rectifying HfOx-based unipolar RRAM with NiSi electrode | Tran, Xuan Anh; Gao, Bin; Yu, Hongyu; Zhu, W. G.; Kang, J. F.; Liu, W. J.; Fang, Z.; Wang, Z. R.; Yeo, Y. C.; Nguyen, B. Y.; Li, M. F. |
