Showing results 7 to 21 of 21
< previous
| Issue Date | Title | Author(s) |
| 2019 | High temperature characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser | Li, Xiang; Wang, Hong; Qiao, Zhongliang; Guo, Xin; Wang, Wanjun; Ng, Geok Ing; Zhang, Yu; Niu, Zhichuan; Tong, Cunzhu; Liu, Chongyang; Sia, Brian Jia Xu |
| 2019 | High-performance 1.06-μm InGaAs/GaAs double-quantum-well semiconductor lasers with asymmetric heterostructure layers | Qiao, Zhongliang; Li, Xiang; Wang, Hong; Li, Te; Gao, Xin; Qu, Yi; Bo, Baoxue; Liu, Chongyang |
| 2023 | High-speed 4 × 4 silicon photonic plasma dispersive switch, operating at the 2 µm waveband | Wang, Jiawei; Sia, Brian Jia Xu; Li, Xiang; Guo, Xin; Wang, Wanjun; Qiao, Zhongliang; Littlejohns, Callum G.; Liu, Chongyang; Reed, Graham T.; Rusli; Wang, Hong |
| 2018 | Investigation of regime switching from mode locking to Q-switching in a 2 µm InGaSb/AlGaAsSb quantum well laser | Li, Xiang; Wang, Hong; Qiao, Zhongliang; Guo, Xin; Wang, Wanjun; Ng, Geok Ing; Zhang, Yu; Xu, Yingqiang; Niu, Zhichuan; Tong, Cunzhu; Liu, Chongyang |
| 2017 | Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser | Li, Xiang; Wang, Hong; Qiao, Zhongliang; Guo, Xin; Ng, Geok Ing; Zhang, Yu; Niu, Zhichuan; Tong, Cunzhu; Liu, Chongyang |
| 2022 | Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide | Qiao, Zhongliang; Li, Xiang; Sia, Brian Jia Xu; Wang, Wanjun; Wang, Hong; Li, Zaijin; Zhao, Zhibin; Li, Lin; Gao, Xin; Bo, Baoxue; Qu, Yi; Liu, Guojin; Liu, Chongyang |
| 2017 | Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy DisorderingQuantum Well Intermixing | Qiao, Zhongliang; Tang, Xiaohong; Li, Xiang; Bo, Baoxue; Gao, Xin; Qu, Yi; Liu, Chongyang; Wang, Hong |
| 2022 | Optical frequency comb generation from a 1.65 µm single-section quantum well laser | Li, Xiang; Sia, Brian Jia Xu; Wang, Jiawei; Qiao, Zhongliang; Wang, Wanjun; Guo, Xin; Wang, Hong; Liu, Chongyang |
| 2021 | Phase noise reduction of a 2 μm passively mode-locked laser through hybrid III-V/silicon integration | Li, Xiang; Sia, Brian Jia Xu; Wang, Wanjun; Qiao, Zhongliang; Guo, Xin; Ng, Geok Ing; Zhang, Yu; Niu, Zhichuan; Tong, Cunzhu; Wang, Hong; Liu, Chongyang |
| 2021 | Stable mode-locked operation with high temperature characteristics of a two-section InGaAs/GaAs double quantum wells laser | Qiao, Zhongliang; Li, Xiang; Sia, Jia Xubrian; Wang, Wanjun; Wang, Hong; Li, Lin; Li, Zaijin; Zhao, Zhibin; Qu, Yi; Gao, Xin; Bo, Baoxue; Liu, Chongyang |
| 2020 | Sub-kHz linewidth, hybrid III-V/silicon wavelength-tunable laser diode operating at the application-rich 1647-1690 nm | Sia, Brian Jia Xu; Li, Xiang; Wang, Wanjun; Qiao, Zhongliang; Guo, Xin; Zhou, Jin; Littlejohns, Callum G.; Liu, Chongyang; Reed, Graham T.; Wang, Hong |
| 2018 | Temperature- and current-dependent repetition frequency of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser | Li, Xiang; Wang, Hong; Qiao, Zhongliang; Guo, Xin; Wang, Wanjun; Ng, Geok Ing; Liu, Chongyang |
| 2017 | Temperature- and current-dependent spontaneous emission study on 2 μm InGaSb/AlGaAsSb quantum well lasers | Li, Xiang; Wang, Hong; Qiao, Zhongliang; Liao, Yongping; Zhang, Yu; Xu, Yingqiang; Niu, Zhichuan; Tong, Cunzhu; Liu, Chongyang |
| 2020 | Temperature-dependent phase noise properties of a two-section GaSb-based mode-locked laser emitting at 2 μm | Li, Xiang; Wang, Hong; Qiao, Zhongliang; Sia, Brian Jia Xu; Wang, Wanjun; Guo, Xin; Zhang, Yu; Niu, Zhichuan; Tong, Cunzhu; Liu, Chongyang |
| 2022 | Wafer-scale demonstration of low-loss (∼0.43 dB/cm), high-bandwidth (>38 GHz), silicon photonics platform operating at the C-band | Sia, Brian Jia Xu; Li, Xiang; Wang, Jiawei; Wang, Wanjun; Qiao, Zhongliang; Guo, Xin; Lee, Chee Wei; Sasidharan, Ashesh; Gunasagar, S.; Littlejohns, Callum G.; Liu, Chongyang; Reed, Graham T.; Ang, Kian Siong; Wang, Hong |