| Issue Date | Title | Author(s) |
 | 2014 | Analysis of correlated gate and drain random telegraph noise in post-soft breakdownTiN/HfLaO/SiOx nMOSFETs | Liu, Wenhu; Padovani, Andrea; Larcher, Luca; Raghavan, Nagarajan; Pey, Kin Leong |
| 2018 | Atomic scale modulation of self‐rectifying resistive switching by interfacial defects | Wu, Xing; Yu, Kaihao; Cha, Dongkyu; Bosman, Michel; Raghavan, Nagarajan; Zhang, Xixiang; Li, Kun; Liu, Qi; Sun, Litao; Pey, Kinleong |
| 2009 | Comparative study of non-standard power diodes | Tan, Cher Ming; Raghavan, Nagarajan; Sun, Lina; Hsu, Chuck; Wang, Chase |
| | 2012 | Dielectric breakdown - recovery in logic and resistive switching in memory : bridging the gap between the two phenomena | Pey, Kin Leong; Raghavan, Nagarajan; Wu, Xing; Liu, Wenhu; Bosman, Michel |
| 2020 | Exploring the impact of variability in resistance distributions of RRAM on the prediction accuracy of deep learning neural networks | Prabhu, Nagaraj Lakshmana; Loy, Desmond Jia Jun; Dananjaya, Putu Andhita; Lew, Wen Siang; Toh, Eng Huat; Raghavan, Nagarajan |
| | 2007 | A framework to practical predictive maintenance modeling for multi-state systems | Tan, Cher Ming; Raghavan, Nagarajan |
| 2010 | Imperfect predictive maintenance model for multi-state systems with multiple failure modes and element failure dependency | Tan, Cher Ming; Raghavan, Nagarajan |
| 2013 | Intrinsic nanofilamentation in resistive switching | Migas, Dmitri B.; Borisenko, Victor E.; Wu, Xing; Cha, Dongkyu; Bosman, Michel; Raghavan, Nagarajan; Zhang, Xi Xiang; Li, Kun; Pey, Kin Leong |
| | 2012 | Nanoscale physical analysis of localized breakdown events in HfO2/SiOX dielectric stacks : a correlation study of STM induced BD with C-AFM and TEM | Shubhakar, K.; Pey, Kin Leong; Bosman, Michel; Thamankar, R.; Kushvaha, S. S.; Loke, Y. C.; Wang, Z. R.; Raghavan, Nagarajan; Wu, X.; O'Shea, S. J. |
| | 2012 | Percolative model and thermodynamic analysis of oxygen-ion-mediated resistive switching | Raghavan, Nagarajan; Pey, Kin Leong; Wu, Xing; Liu, Wenhu; Bosman, Michel |
| 2018 | A rapid design exploration framework under additive manufacturing process uncertainty | Xiong, Yi; Duong, Pham Luu Trung; Raghavan, Nagarajan; Rosen, David W |
| 2013 | Resilience of ultra-thin oxynitride films to percolative wear-out and reliability implications for high-κ stacks at low voltage stress | Raghavan, Nagarajan; Padovani, Andrea; Li, Xiang; Bosman, Michel; Wu, Xing; Lip Lo, Vui; Larcher, Luca; Leong Pey, Kin |
| | 2012 | Role of grain boundary percolative defects and localized trap generation on the reliability statistics of high-κ gate dielectric stacks | Raghavan, Nagarajan; Pey, Kin Leong; Shubhakar, K.; Wu, X.; Liu, W. H.; Bosman, Michel |
| 2008 | Statistical modeling of via redundancy effects on interconnect reliability | Tan, Cher Ming; Raghavan, Nagarajan |
| 2012 | Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications | Liu, W. H.; Pey, Kin Leong; Raghavan, Nagarajan; Wu, X.; Bosman, Michel |
