Browsing by Author Raghavan, Nagarajan

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Showing results 9 to 15 of 15 < previous 
Issue DateTitleAuthor(s)
 2012Nanoscale physical analysis of localized breakdown events in HfO2/SiOX dielectric stacks : a correlation study of STM induced BD with C-AFM and TEMShubhakar, K.; Pey, Kin Leong; Bosman, Michel; Thamankar, R.; Kushvaha, S. S.; Loke, Y. C.; Wang, Z. R.; Raghavan, Nagarajan; Wu, X.; O'Shea, S. J.
 2012Percolative model and thermodynamic analysis of oxygen-ion-mediated resistive switchingRaghavan, Nagarajan; Pey, Kin Leong; Wu, Xing; Liu, Wenhu; Bosman, Michel
2018A rapid design exploration framework under additive manufacturing process uncertaintyXiong, Yi; Duong, Pham Luu Trung; Raghavan, Nagarajan; Rosen, David W
2013Resilience of ultra-thin oxynitride films to percolative wear-out and reliability implications for high-κ stacks at low voltage stressRaghavan, Nagarajan; Padovani, Andrea; Li, Xiang; Bosman, Michel; Wu, Xing; Lip Lo, Vui; Larcher, Luca; Leong Pey, Kin
 2012Role of grain boundary percolative defects and localized trap generation on the reliability statistics of high-κ gate dielectric stacksRaghavan, Nagarajan; Pey, Kin Leong; Shubhakar, K.; Wu, X.; Liu, W. H.; Bosman, Michel
2008Statistical modeling of via redundancy effects on interconnect reliabilityTan, Cher Ming; Raghavan, Nagarajan
2012Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implicationsLiu, W. H.; Pey, Kin Leong; Raghavan, Nagarajan; Wu, X.; Bosman, Michel