Browsing by Author Ranjan, Kumud


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Showing results 3 to 10 of 10 < previous 
Issue DateTitleAuthor(s)
 2014High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on siliconRanjan, Kumud; Arulkumaran, Subramaniam; Ng, Geok Ing; Vicknesh, Sahmuganathan
 2014In0.17Al0.83N/AlN/GaN triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03A/mm, IOFF=1.13 μA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 VTeo, Khoon Leng; Ng, Geok Ing; Ranjan, Kumud; Shoron, O. F.; Arulkumaran, Subramaniam; Rajan, S.; Dolmanan, S. B.; Manoj Kumar, Chandra Mohan; Tripathy, S.
 2017InAlN/GaN HEMTs on Si With High fT of 250 GHzXing, Weichuan; Liu, Zhihong; Qiu, Haodong; Ranjan, Kumud; Gao, Yu; Ng, Geok Ing; Palacios, Tomás
2017Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiNLi, Yang; Ng, Geok Ing; Arulkumaran, Subramaniam; Ye, Gang; Liu, Zhi Hong; Ranjan, Kumud; Ang, Kian Siong
2019Investigation of self-heating effect on DC and RF performances in AlGaN/GaN HEMTs on CVD-DiamondRanjan, Kumud; Arulkumaran, S.; Ng, Geok Ing; Sandupatla, A.
2019Low voltage high-energy α-particle detectors by GaN-on-GaN Schottky diodes with record-high charge collection efficiencySandupatla, Abhinay; Arulkumaran, Subramaniam; Ranjan, Kumud; Ng, Geok Ing; Murmu, Peter P.; Kennedy, John; Nitta, Shugo; Honda, Yoshio; Deki, Manato; Amano, Hiroshi
 2021Non-linear thermal resistance model for the simulation of high power GaN-based devicesGarciá-Sánchez, S.; Iñiguez-de-la-Torre, I.; Pérez, S.; Ranjan, Kumud; Agrawal, Manvi; Lingaparthi, R.; Dharmarasu, Nethaji; Radhakrishnan, K.; Arulkumaran, Subramaniam; Ng, Geok Ing; González, T.; Mateos, J.
2015Record low contact resistance for InAlN/GaN HEMTs on Si with non-gold metalArulkumaran, Subramaniam; Ng, Geok Ing; Ranjan, Kumud; Kumar, Chandra Mohan Manoj; Foo, Siew Chuen; Ang, Kian Siong; Vicknesh, Sahmuganathan; Dolmanan, Surani Bin; Bhat, Thirumaleshwara; Tripathy, Sudhiranjan