| Issue Date | Title | Author(s) |
| 2021 | 35 challenges in materials science being tackled by PIs under 35(ish) in 2021 | Aguado, Brian; Bray, Laura J.; Caneva, Sabina; Correa-Baena, Juan-Pablo; Di Martino, Giuliana; Fang, Chengcheng; Fang, Yin; Gehring, Pascal; Grosso, Gabriele; Gu, Xiaodan; Guo, Peijun; He, Yu; Kempa, Thomas J.; Kutys, Matthew; Li, Jinxing; Li, Tian; Liao, Bolin; Liu, Fang; Molina-Lopez, Francisco; Pickel, Andrea; Porras, Ana M.; Raman, Ritu; Sletten, Ellen M.; Smith, Quinton; Tan, Chaoliang; Wang, Haotian; Wang, Huiliang; Wang, Sihong; Wang, Zhongrui; Wehmeyer, Geoffrey; Wei, Lu; Yang, Yuan; Zarzar, Lauren D.; Zhao, Meiting; Zheng, Yuqing; Cranford, Steve |
| 2014 | Advanced oxide based resistive random access memories (RRAMs) : switching mechanisms and material solutions | Wang, Zhongrui |
| 2023 | Electronic/optoelectronic memory device enabled by tellurium-based 2D van der Waals heterostructure for in-sensor reservoir computing at the optical communication band | Zha, Jiajia; Shi, Shuhui; Chaturvedi, Apoorva; Huang, Haoxin; Yang, Peng; Yao, Yao; Li, Siyuan; Xia, Yunpeng; Zhang, Zhuomin; Wang, Wei; Wang, Huide; Wang, Shaocong; Yuan, Zhen; Yang, Zhengbao; He, Qiyuan; Tai, Huiling; Teo, Edwin Hang Tong; Yu, Hongyu; Ho, Johnny C.; Wang, Zhongrui; Zhang, Hua; Tan, Chaoliang |
| 2012 | Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping | Wu, L.; Wang, Zhongrui; Zhu, W. G.; Du, A. Y.; Fang, Z.; Tran, Xuan Anh; Liu, W. J.; Zhang, K. L.; Yu, Hongyu |
| 2012 | Mechanism of different switching directions in graphene oxide based RRAM | Wang, Zhongrui; Tjoa, Verawati; Wu, L.; Liu, W. J.; Fang, Z.; Tran, Xuan Anh; Wei, J.; Zhu, W. G.; Yu, Hongyu |
| 2012 | Transport properties of HfO2−x based resistive-switching memories | Wang, Zhongrui; Yu, Hongyu; Tran, Xuan Anh; Fang, Zheng; Wang, Jinghao; Su, Haibin |
| 2013 | The transport properties of oxygen vacancy-related polaron-like bound state in HfOx | Wang, Zhongrui; Yu, Hongyu; Su, Haibin |