Showing results 3 to 17 of 17
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| Issue Date | Title | Author(s) |
| 2012 | Effect of growth temperature on the epitaxy strain relaxation and the tilt of InxAl1−x as graded layer grown by solid-source molecular beam epitaxy | Loke, Wan Khai; Tan, Kian Hua; Wicaksono, Satrio; Yoon, Soon Fatt; Owen, Man Hon Samuel; Yeo, Yee-Chia |
| 2012 | Electronic band structure and effective mass parameters of Ge1−xSnx alloys | Low, Kain Lu; Yang, Yue; Han, Genquan; Fan, Weijun; Yeo, Yee-Chia |
| 2018 | Germanium-tin (GeSn) p-channel fin field-effect transistor fabricated on a novel GeSn-on-insulator substrate | Lei, Dian; Lee, Kwang Hong; Huang, Yi-Chiau; Wang, Wei; Masudy-Panah, Saeid; Yadav, Sachin; Kumar, Annie; Dong, Yuan; Kang, Yuye; Xu, Shengqiang; Wu, Ying; Tan, Chuan Seng; Gong, Xiao; Yeo, Yee-Chia |
| 2018 | GeSn lateral p-i-n photodetector on insulating substrate | Xu, Shengqiang; Huang, Yi-Chiau; Lee, Kwang Hong; Wang, Wei; Dong, Yuan; Lei, Dian; Masudy-Panah, Saeid; Tan, Chuan Seng; Gong, Xiao; Yeo, Yee-Chia |
| 2016 | GeSn-on-insulator substrate formed by direct wafer bonding | Lee, Kwang Hong; Bao, Shuyu; Wang, Wei; Lei, Dian; Wang, Bing; Gong, Xiao; Tan, Chuan Seng; Yeo, Yee-Chia |
| 2018 | High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform | Wang, Wei; Lei, Dian; Huang, Yi-Chiau; Lee, Kwang Hong; Loke, Wan-Khai; Dong, Yuan; Xu, Shengqiang; Tan, Chuan Seng; Wang, Hong; Yoon, Soon-Fatt; Gong, Xiao; Yeo, Yee-Chia |
| 2019 | High-speed photo detection at two-micron-wavelength : technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate | Xu, Shengqiang; Wang, Wei; Huang, Yi-Chiau; Dong, Yuan; Masudy-Panah, Saeid; Wang, Hong; Gong, Xiao; Yeo, Yee-Chia |
| 2014 | Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions | Richard D'Costa, Vijay; Subramanian, Sujith; Li, Daosheng; Wicaksono, Satrio; Yoon, Soon Fatt; Tok, Eng Soon; Yeo, Yee-Chia |
| 2016 | InGaP grown on Ge (100) by molecular beam epitaxy: a spectroscopic ellipsometry study | D’Costa, Vijay Richard; Loke, Wan Khai; Zhou, Qian; Yoon, Soon Fatt; Yeo, Yee-Chia |
| 2017 | Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs) | Kumar, Annie; Lee, Shuh-Ying; Yadav, Sachin; Tan, Kian Hua; Loke, Wan Khai; Dong, Yuan; Lee, Kwang Hong; Wicaksono, Satrio; Liang, Gengchiau; Yoon, Soon-Fatt; Antoniadis, Dimitri; Yeo, Yee-Chia; Gong, Xiao |
| 2015 | Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy | D'Costa, Vijay Richard; Tan, Kian Hua; Jia, Bo Wen; Yoon, Soon Fatt; Yeo, Yee-Chia |
| 2012 | N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates | Ivana; Subramanian, Sujith; Owen, Man Hon Samuel; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt; Yeo, Yee-Chia |
| 2018 | Strain relaxation of germanium-tin (GeSn) fins | Kang, Yuye; Huang, Yi-Chiau; Lee, Kwang Hong; Bao, Shuyu; Wang, Wei; Lei, Dian; Masudy-Panah, Saeid; Dong, Yuan; Wu, Ying; Xu, Shengqiang; Tan, Chuan Seng; Gong, Xiao; Yeo, Yee-Chia |
| 2017 | Thermal stability of germanium-tin (GeSn) fins | Lei, Dian; Lee, Kwang Hong; Bao, Shuyu; Wang, Wei; Masudy-Panah, Saeid; Tan, Chuan Seng; Tok, Eng Soon; Gong, Xiao; Yeo, Yee-Chia |
| 2013 | Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction | Hu, Hailong.; Guo, Pengfei; Yang, Yue; Cheng, Yuanbing; Han, Genquan; Pan, Jisheng; Ivana; Zhang, Zheng; Shen, Zexiang; Chia, Ching Kean; Yeo, Yee-Chia |