Showing results 20 to 39 of 83
< previous
next >
| Issue Date | Title | Author(s) |
 | 2004 | Development of copper metallization for Deep Submicron Integrated Circuits (DSICs) | Krishnamachar Prasad; Zhang, Dao Hua; Tan, Cher Ming |
| 2007 | Development of InSbN alloys for 8 to 12 micron room temperature infrared photodetectors | Zhang, Dao Hua |
 | 2016 | Effect of lateral size and thickness on the electronic structure and optical properties of quasi two-dimensional CdSe and CdS nanoplatelets | Bose, Sumanta; Song, Zhigang; Fan, Wei Jun; Zhang, Dao Hua |
| | 2012 | Efficient and wide spectrum half-cylindrical hyperlens with symmetrical metallodielectric structure | Wang, Yueke; Zhang, Dao Hua; Yan, Changchun; Li, Dongdong; Xu, Zhengji |
| | 2012 | Electrical properties of InSbN alloys fabricated by two-step ion implantation | Wang, Youyi; Zhang, Dao Hua; Jin, Y. J.; Chen, X. Z.; Li, J. H. |
| 2018 | Electrically controlled enhancement in plasmonic mid-infrared photodiode | Tobing, Landobasa Yosef Mario; Tong, Jinchao; Zhang, Dao Hua |
| 2004 | Electrochemical plated copper for interconnect applications | Loh, Stephen Soon Ann. |
| 2016 | Electronic bandstructure and optical gain of lattice matched III-V dilute nitride bismide quantum wells for 1.55 μm optical communication systems | Fan, Wei Jun; Bose, Sumanta; Zhang, Dao Hua |
| 2012 | Elimination of spurious solutions from k·p theory with Fourier transform technique and Burt-Foreman operator ordering | Zhao, Qiuji; Mei, Ting; Zhang, Dao Hua |
| 2003 | Fabrication and characterisation of microelectronics devices, circuits and system II | Zhang, Dao Hua |
| | 2012 | Fourier transform-based k·p method : an approach to meshless modeling of low-dimensional heterostructures | Mei, Ting; Zhao, Qiuji; Zhang, Dao Hua |
| 2007 | GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm | Ma, B. S.; Fan, Weijun; Dang, Y. X.; Cheah, Weng Kwong; Loke, Wan Khai; Liu, W.; Li, D. S.; Yoon, Soon Fatt; Zhang, Dao Hua; Wang, H.; Tung, Chih Hang |
| 1996 | Growth of GaAs/AlGaAs quantum well lasers and GaAs/InGaAs vertical cavity surface emitting lasers by MBE | Li, Chaoyong. |
| 2005 | Growth of p-type GaAs∕AlGaAs(111) quantum well infrared photodetector using solid source molecular-beam epitaxy | Li, H.; Mei, T.; Karunasiri, G.; Yuan, K. H.; Fan, Weijun; Zhang, Dao Hua; Yoon, Soon Fatt |
| 2018 | High quality InAsSb-based heterostructure n-i-p mid-wavelength infrared photodiode | Tong, Jinchao; Tobing, Landobasa Y.M.; Ni, Peinan; Zhang, Dao Hua |
| 2018 | InAs0.9Sb0.1-based hetero-p-i-n structure grown on GaSb with high mid-infrared photodetection performance at room temperature | Tobing, Landobasa Yosef Mario; Tong, Jinchao; Qian, Li; Suo, Fei; Zhang, Dao Hua |
| 2019 | Indium antimonide uncooled photodetector with dual band photoresponse in the infrared and millimeter wave range | Tong, Jinchao; Suo, Fei; Zhou, Wei; Qu, Yue; Yao, Niangjuan; Hu, Tao; Huang, Zhiming; Zhang, Dao Hua |
| | 2018 | Influence of ultrasonic vibration on percussion drilling performance for millisecond pulsed Nd:YAG laser | Wang, Houxiao; Zhu, Sukai; Xu, Guoxiang; Zhou, Wei; Li, Lin; Zhang, Dao Hua; Ren, Naifei; Xia, Kaibo; Shi, Chunhui |
| 2007 | Interdiffusion in narrow InGaAsN∕GaAs quantum wells | Liu, W.; Zhang, Dao Hua; Huang, Z. M.; Wang, S. Z.; Yoon, Soon Fatt; Fan, Weijun; Liu, C. J.; Wee, A. T. S. |
| 2008 | Intersubband transitions in InGaAsN/GaAs quantum wells | Liu, W.; Hou, X. Y.; Jiang, Z. M.; Zhang, Dao Hua; Fan, Weijun |
