Browsing by Author Agrawal, M.

Showing results 1 to 6 of 6
Issue DateTitleAuthor(s)
 2012Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si(111) by ammonia molecular beam epitaxyDharmarasu, Nethaji; Radhakrishnan, K.; Agrawal, M.; Ravikiran, Lingaparthi; Arulkumaran, Subramaniam; Lee, Kenneth E.; Ing, Ng Geok
2011Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBEAgrawal, M.; Radhakrishnan, K.; Sun, Z. Z.; Dharmarasu, Nethaji
2015Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxyRavikiran, L.; Dharmarasu, N.; Radhakrishnan, K.; Agrawal, M.; Yiding, Lin; Arulkumaran, S.; Vicknesh, S.; Ng, G. I.
 2011Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBESun, Z. Z.; Radhakrishnan, K.; Agrawal, M.; Dharmarasu, Nethaji
2013Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111)Ravikiran, L.; Radhakrishnan, K.; Agrawal, M.; Munawar Basha, S.; Dharmarasu, Nethaji
 2012Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxyAgrawal, M.; Radhakrishnan, K.; Dharmarasu, Nethaji; Ravikiran, Lingaparthi