Showing results 1 to 20 of 41
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| Issue Date | Title | Author(s) |
| | 2013 | Al2O3 interface engineering of germanium epitaxial layer grown directly on silicon | Fitzgerald, Eugene A.; Tan, Yew Heng; Yew, Kwang Sing; Lee, Kwang Hong; Chang, Yao-Jen; Chen, Kuan-Neng; Ang, Diing Shenp; Tan, Chuan Seng |
 | 2020 | Alteration of gate-oxide trap capture/emission time constants by channel hot-carrier effect in the metal-oxide-semiconductor field-effect transistor | Ju, Xin; Ang, Diing Shenp |
| | 2012 | Are interface state generation and positive oxide charge trapping under negative-bias temperature stressing correlated or coupled? | Ho, T. J. J.; Boo, A. A.; Teo, Z. Q.; Leong, K. C.; Ang, Diing Shenp |
| 2018 | Argon-plasma-controlled optical reset in the SiO2/Cu filamentary resistive memory stack | Kawashima, T.; Yew, K. S.; Kyuno, K.; Zhou, Yu; Ang, Diing Shenp; Zhang, H. Z. |
| | 2011 | Bimodal weibull distribution of metal/high-κ gate stack TDDB-insights by scanning tunneling microscopy | Yew, K. S.; Bersuker, G.; Ang, Diing Shenp |
| | 2012 | Correlation between oxide trap generation and negative-bias temperature instability | Boo, A. A.; Teo, Z. Q.; Leong, K. C.; Ang, Diing Shenp |
| 2013 | Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator | Bera, L. K.; Tham, W. H.; Kajen, R. S.; Dolmanan, S. B.; Kumar, M. Krishna; Lin, Vivian Kaixin; Ang, Diing Shenp; Bhat, T. N.; Yakovlev, N.; Tripathy, Sudhiranjan |
| 2015 | Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure | Duan, Tian Li; Pan, Ji Sheng; Ang, Diing Shenp |
| 2013 | Electron trap transformation under positive-bias temperature stressing | Gao, Yuan; Ang, Diing Shenp; Bersuker, G.; Young, C. D. |
| 2016 | Enhanced stability of complementary resistance switching in the TiN/HfOx/TiN resistive random access memory device via interface engineering | Ang, Diing Shenp; Zhang, H. Z.; Yew, K. S.; Wang, X. P. |
| 2017 | Enlarged read window in the asymmetric ITO/HfOx/TiN complementary resistive switch | Zhang, H. Z.; Ang, Diing Shenp; Zhou, Yu; Wang, Xin Peng |
| | 2012 | Evidence for the transformation of switching hole traps into permanent bulk traps under negative-bias temperature stressing of high-k P-MOSFETs | Gao, Yuan; Ang, Diing Shenp; Young, C. D.; Bersuker, G. |
| | 2012 | Evolution of hole trapping in the oxynitride gate p-MOSFET subjected to negative-bias temperature stressing | Boo, A. A.; Ang, Diing Shenp |
| 2018 | First principle investigation of electronic transport properties of the edge shaped graphene-porphine molecular junction device | Kole, Abhisek; Ang, Diing Shenp |
| 2016 | Gold-free contacts on Al
x
Ga
1-x
N/GaN high electron mobility transistor structure grown on a 200-mm diameter Si(111) substrate | Tham, Wai Hoe; Ang, Diing Shenp; Bera, Lakshmi Kanta; Surani Bin Doimanan; Bhat, Thirumaleshwara N.; Kajen, Rasanayagam S.; Tan, Hui Ru; Teo, Siew Lang; Tripathy, Sudhiranjan |
| 2020 | Highly transparent ITO/HfO2/ITO device for visible-light sensing | Kalaga, Pranav Sairam; Kumar, Dayanand; Ang, Diing Shenp; Tsakadze, Zviad |
| 2013 | Impact of Lanthanum on positive-bias temperature instability - insight from first-principles simulation | Gu, Chen Jie; Ang, Diing Shenp |
| 2016 | Impact of voltage-accelerated stress on hole trapping at operating condition | Tung, Zhi Yan; Ang, Diing Shenp |
| 2019 | Inducing alternating nanoscale rectification in a dielectric material for bidirectional-trigger artificial synapses | Berco, Dan; Ang, Diing Shenp |
| 2013 | Interfacial chemistry and valence band offset between GaN and Al2O3 studied by X-ray photoelectron spectroscopy | Duan, T. L.; Pan, J. S.; Ang, Diing Shenp |
