Browsing by Author Ang, Kian Siong

Showing results 1 to 16 of 16
Issue DateTitleAuthor(s)
2014Band alignment between GaN and ZrO2 formed by atomic layer depositionYe, Gang; Wang, Hong; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Liu, Zhi Hong; Ang, Kian Siong
2021Compact, hybrid III-V/silicon Vernier laser diode operating from 1955-1992 nmSia, Brian Jia Xu; Li, Xiang; Wang, Wanjun; Qiao, Zhongliang; Guo, Xin; Wang, Jiawei; Littlejohns, Callum George; Liu, Chongyang; Reed, Graham T.; Ang, Kian Siong; Wang, Hong
2013Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal-oxide-semiconductor-compatible non-gold metal stackArulkumaran, Subramaniam; Ng, Geok Ing; Vicknesh, Sahmuganathan; Wang, Hong; Ang, Kian Siong; Kumar, Chandramohan Manoj; Teo, Khoon Leng; Ranjan, Kumud
1999Design and fabrication of III-V RF devices for MMIC applicationsAng, Kian Siong
2012Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrateArulkumaran, Subramaniam; Ng, Geok Ing; Vicknesh, Sahmuganathan; Wang, Hong; Ang, Kian Siong; Tan, Joyce Pei Ying; Lin, Vivian Kaixin; Todd, Shane; Lo, Guo-Qiang; Tripathy, Sudhiranjan
2015Effect of surface pretreatment on interfacial chemical bonding states of atomic layer deposited ZrO2 on AlGaNYe, Gang; Wang, Hong; Ng, Serene Lay Geok; Ji, Rong; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Liu, Zhi Hong; Ang, Kian Siong
2014High-Photocurrent and Wide-Bandwidth UTC Photodiodes With Dipole-Doped StructureMeng, Qian Qian; Wang, Hong; Liu, Chong Yang; Ang, Kian Siong; Guo, Xin; Gao, Bo; Tian, Yang; Manoj Kumar, Chandra Mohan; Gao, Jianjun
 2012High-responsivity modulation-doped AlGaAs/InGaAs thermopiles for uncooled IR-FPA utilizing integrated HEMT-MEMS technologyAbe, Masayuki; Abe, Yuki; Kogushi, Noriaki; Ang, Kian Siong; Hofstetter, René; Wang, Hong; Ng, Geok Ing
2017High-speed and high-responsivity InP-based uni-traveling-carrier photodiodesMeng, Qianqian; Wang, Hong; Liu, Chongyang; Guo, Xin; Gao, Jianjun; Ang, Kian Siong
2015Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer depositionYe, Gang; Wang, Hong; Ng, Serene Lay Geok; Ji, Rong; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Liu, Zhi Hong; Ang, Kian Siong
2014Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer depositionYe, Gang; Wang, Hong; Ng, Serene Lay Geok; Ji, Rong; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Liu, Zhi Hong; Ang, Kian Siong
2017Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiNLi, Yang; Ng, Geok Ing; Arulkumaran, Subramaniam; Ye, Gang; Liu, Zhi Hong; Ranjan, Kumud; Ang, Kian Siong
2014Investigation of temperature-dependent lasing and optical gain characteristics of 1.3-μm inas quantum dot laserLiu, Chongyang; Wang, Rui; Wang, Hong; Meng, Qianqian; Ang, Kian Siong
 2013Low-contact-resistance non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts on undoped AlGaN/GaN high-electron-mobility transistors grown on siliconLi, Yang; Ng, Geok Ing; Arulkumaran, Subramaniam; Manoj Kumar, Chandra Mohan; Ang, Kian Siong; Anand, Mulagumoottil Jesudas; Wang, Hong; Hofstetter, René; Ye, Gang
2015Record low contact resistance for InAlN/GaN HEMTs on Si with non-gold metalArulkumaran, Subramaniam; Ng, Geok Ing; Ranjan, Kumud; Kumar, Chandra Mohan Manoj; Foo, Siew Chuen; Ang, Kian Siong; Vicknesh, Sahmuganathan; Dolmanan, Surani Bin; Bhat, Thirumaleshwara; Tripathy, Sudhiranjan
2022Wafer-scale demonstration of low-loss (∼0.43 dB/cm), high-bandwidth (>38 GHz), silicon photonics platform operating at the C-bandSia, Brian Jia Xu; Li, Xiang; Wang, Jiawei; Wang, Wanjun; Qiao, Zhongliang; Guo, Xin; Lee, Chee Wei; Sasidharan, Ashesh; Gunasagar, S.; Littlejohns, Callum G.; Liu, Chongyang; Reed, Graham T.; Ang, Kian Siong; Wang, Hong