| Issue Date | Title | Author(s) |
 | 2014 | Band alignment between GaN and ZrO2 formed by atomic layer deposition | Ye, Gang; Wang, Hong; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Liu, Zhi Hong; Ang, Kian Siong |
 | 2021 | Compact, hybrid III-V/silicon Vernier laser diode operating from 1955-1992 nm | Sia, Brian Jia Xu; Li, Xiang; Wang, Wanjun; Qiao, Zhongliang; Guo, Xin; Wang, Jiawei; Littlejohns, Callum George; Liu, Chongyang; Reed, Graham T.; Ang, Kian Siong; Wang, Hong |
 | 2013 | Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal-oxide-semiconductor-compatible non-gold metal stack | Arulkumaran, Subramaniam; Ng, Geok Ing; Vicknesh, Sahmuganathan; Wang, Hong; Ang, Kian Siong; Kumar, Chandramohan Manoj; Teo, Khoon Leng; Ranjan, Kumud |
 | 1999 | Design and fabrication of III-V RF devices for MMIC applications | Ang, Kian Siong |
 | 2012 | Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate | Arulkumaran, Subramaniam; Ng, Geok Ing; Vicknesh, Sahmuganathan; Wang, Hong; Ang, Kian Siong; Tan, Joyce Pei Ying; Lin, Vivian Kaixin; Todd, Shane; Lo, Guo-Qiang; Tripathy, Sudhiranjan |
 | 2015 | Effect of surface pretreatment on interfacial chemical bonding states of atomic layer deposited ZrO2 on AlGaN | Ye, Gang; Wang, Hong; Ng, Serene Lay Geok; Ji, Rong; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Liu, Zhi Hong; Ang, Kian Siong |
 | 2014 | High-Photocurrent and Wide-Bandwidth UTC Photodiodes With Dipole-Doped Structure | Meng, Qian Qian; Wang, Hong; Liu, Chong Yang; Ang, Kian Siong; Guo, Xin; Gao, Bo; Tian, Yang; Manoj Kumar, Chandra Mohan; Gao, Jianjun |
| 2012 | High-responsivity modulation-doped AlGaAs/InGaAs thermopiles for uncooled IR-FPA utilizing integrated HEMT-MEMS technology | Abe, Masayuki; Abe, Yuki; Kogushi, Noriaki; Ang, Kian Siong; Hofstetter, René; Wang, Hong; Ng, Geok Ing |
 | 2017 | High-speed and high-responsivity InP-based uni-traveling-carrier photodiodes | Meng, Qianqian; Wang, Hong; Liu, Chongyang; Guo, Xin; Gao, Jianjun; Ang, Kian Siong |
 | 2015 | Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition | Ye, Gang; Wang, Hong; Ng, Serene Lay Geok; Ji, Rong; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Liu, Zhi Hong; Ang, Kian Siong |
 | 2014 | Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition | Ye, Gang; Wang, Hong; Ng, Serene Lay Geok; Ji, Rong; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Liu, Zhi Hong; Ang, Kian Siong |
 | 2017 | Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN | Li, Yang; Ng, Geok Ing; Arulkumaran, Subramaniam; Ye, Gang; Liu, Zhi Hong; Ranjan, Kumud; Ang, Kian Siong |
 | 2014 | Investigation of temperature-dependent lasing and optical gain characteristics of 1.3-μm inas quantum dot laser | Liu, Chongyang; Wang, Rui; Wang, Hong; Meng, Qianqian; Ang, Kian Siong |
| 2013 | Low-contact-resistance non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts on undoped AlGaN/GaN high-electron-mobility transistors grown on silicon | Li, Yang; Ng, Geok Ing; Arulkumaran, Subramaniam; Manoj Kumar, Chandra Mohan; Ang, Kian Siong; Anand, Mulagumoottil Jesudas; Wang, Hong; Hofstetter, René; Ye, Gang |
 | 2015 | Record low contact resistance for InAlN/GaN HEMTs on Si with non-gold metal | Arulkumaran, Subramaniam; Ng, Geok Ing; Ranjan, Kumud; Kumar, Chandra Mohan Manoj; Foo, Siew Chuen; Ang, Kian Siong; Vicknesh, Sahmuganathan; Dolmanan, Surani Bin; Bhat, Thirumaleshwara; Tripathy, Sudhiranjan |
 | 2022 | Wafer-scale demonstration of low-loss (∼0.43 dB/cm), high-bandwidth (>38 GHz), silicon photonics platform operating at the C-band | Sia, Brian Jia Xu; Li, Xiang; Wang, Jiawei; Wang, Wanjun; Qiao, Zhongliang; Guo, Xin; Lee, Chee Wei; Sasidharan, Ashesh; Gunasagar, S.; Littlejohns, Callum G.; Liu, Chongyang; Reed, Graham T.; Ang, Kian Siong; Wang, Hong |