Browsing by Author Arulkumaran, Subramaniam


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Issue DateTitleAuthor(s)
2012AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)Dolmanan, S. B.; Kajen, R. S.; Bera, L. K.; Teo, S. L.; Wang, W. Z.; Li, H.; Lee, D.; Han, S.; Tripathy, Sudhiranjan; Lin, Vivian Kaixin; Tan, Joyce Pei Ying; Kumar, M. Krishna; Arulkumaran, Subramaniam; Ng, Geok Ing; Vicknesh, Sahmuganathan; Todd, Shane; Lo, Guo-Qiang
2013Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on siliconYe, G.; Wang, Hong; Arulkumaran, Subramaniam; Ng, Geok Ing; Hofstetter, R.; Li, Y.; Anand, M. J.; Ang, K. S.; Bryan, Maung Ye Kyaw Thu; Foo, Siew Chuen
2014Band alignment between GaN and ZrO2 formed by atomic layer depositionYe, Gang; Wang, Hong; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Liu, Zhi Hong; Ang, Kian Siong
 2014A Compact Model for Generic MIS-HEMTs Based on the Unified 2DEG Density ExpressionZhang, Junbin; Syamal, Binit; Zhou, Xing; Arulkumaran, Subramaniam; Ng, Geok Ing
2015Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistorsLi, Yang; Ng, Geok Ing; Arulkumaran, Subramaniam; Ye, Gang; Manoj Kumar, Chandra Mohan; Anand, Mulagumoottil Jesudas; Liu, Zhi Hong
 2012Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si(111) by ammonia molecular beam epitaxyDharmarasu, Nethaji; Radhakrishnan, K.; Agrawal, M.; Ravikiran, Lingaparthi; Arulkumaran, Subramaniam; Lee, Kenneth E.; Ing, Ng Geok
2013Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal-oxide-semiconductor-compatible non-gold metal stackArulkumaran, Subramaniam; Ng, Geok Ing; Vicknesh, Sahmuganathan; Wang, Hong; Ang, Kian Siong; Kumar, Chandramohan Manoj; Teo, Khoon Leng; Ranjan, Kumud
2012Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrateArulkumaran, Subramaniam; Ng, Geok Ing; Vicknesh, Sahmuganathan; Wang, Hong; Ang, Kian Siong; Tan, Joyce Pei Ying; Lin, Vivian Kaixin; Todd, Shane; Lo, Guo-Qiang; Tripathy, Sudhiranjan
2015Effect of surface pretreatment on interfacial chemical bonding states of atomic layer deposited ZrO2 on AlGaNYe, Gang; Wang, Hong; Ng, Serene Lay Geok; Ji, Rong; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Liu, Zhi Hong; Ang, Kian Siong
 2012Effective suppression of current collapse in both E- and D-mode AlGaN/GaN HEMTs on Si by [(NH4)2Sx] passivationVicknesh, Sahmuganathan; Arulkumaran, Subramaniam; Ng, Geok Ing
 2012GaN-on-Silicon integration technologyNg, Geok Ing; Arulkumaran, Subramaniam; Vicknesh, Sahmuganathan; Wang, H.; Ang, K. S.; Kumar, C. M. Manoj; Ranjan, K.; Lo, Guo-Qiang; Tripathy, Sudhiranjan; Boon, Chirn Chye; Lim, Wei Meng
 2014High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on siliconRanjan, Kumud; Arulkumaran, Subramaniam; Ng, Geok Ing; Vicknesh, Sahmuganathan
 2011High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on siliconVicknesh, S.; Ng, G. I.; Liu, Z. H.; Selvaraj, S. L.; Egawa, T.; Arulkumaran, Subramaniam
2014High-frequency microwave noise characteristics of InAlN/GaN high-electron mobility transistors on Si (111) substrateArulkumaran, Subramaniam; Ranjan, K.; Ng, G. I.; Manoj Kumar, C. M.; Vicknesh, S.; Dolmanan, S. B.; Tripathy, S.
2015Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer depositionYe, Gang; Wang, Hong; Ng, Serene Lay Geok; Ji, Rong; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Liu, Zhi Hong; Ang, Kian Siong
 2012Improved OFF-state breakdown voltage in AlGaN/GaN HEMTs grown on 150-mm diameter silicon-on-insulator (SOI) substrateDolmanan, S. B.; Teo, S. L.; Arulkumaran, Subramaniam; Lin, Vivian Kaixin; Ng, Geok Ing; Vicknesh, Sahmuganathan; Tan, Joyce Pei Ying; Kumar, M. Krishna; Tripathy, Sudhiranjan
 2014In0.17Al0.83N/AlN/GaN triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03A/mm, IOFF=1.13 μA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 VTeo, Khoon Leng; Ng, Geok Ing; Ranjan, Kumud; Shoron, O. F.; Arulkumaran, Subramaniam; Rajan, S.; Dolmanan, S. B.; Manoj Kumar, Chandra Mohan; Tripathy, S.
2014Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer depositionYe, Gang; Wang, Hong; Ng, Serene Lay Geok; Ji, Rong; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Liu, Zhi Hong; Ang, Kian Siong
2017Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiNLi, Yang; Ng, Geok Ing; Arulkumaran, Subramaniam; Ye, Gang; Liu, Zhi Hong; Ranjan, Kumud; Ang, Kian Siong
2019Low voltage high-energy α-particle detectors by GaN-on-GaN Schottky diodes with record-high charge collection efficiencySandupatla, Abhinay; Arulkumaran, Subramaniam; Ranjan, Kumud; Ng, Geok Ing; Murmu, Peter P.; Kennedy, John; Nitta, Shugo; Honda, Yoshio; Deki, Manato; Amano, Hiroshi