| Issue Date | Title | Author(s) |
| | 2010 | Alternative resistive switching mechanism based on migration of charged counter-ions within conductive polymers | Sim, R.; Chan, Mei Yin; Wong, A. S. W.; Lee, Pooi See |
| | 2009 | Catalytic growth of germanium oxide nanowires, nanotubes, and germanium nanowires : temperature-dependent effect | Yan, Chaoyi; Chan, Mei Yin; Zhang, Tao; Lee, Pooi See |
| | 2009 | Charge-induced conductance modulation of carbon nanotube field effect transistor memory devices | Chan, Mei Yin; Wei, Li; Chen, Yuan; Chan, Lap; Lee, Pooi See |
 | 2007 | Ge nanocrystals in lanthanide-based Lu2O3 high-k dielectric for nonvolatile memory applications | Seng, H. L.; Ho, V.; Chan, Mei Yin; Lee, Pooi See |
| 2009 | Lanthanide-based graded barrier structure for enhanced nanocrystal memory properties | Chan, T. K.; Osipowicz, T.; Chan, L.; Chan, Mei Yin; Lee, Pooi See |
| | 2007 | Leakage conduction mechanism of amorphous Lu2O3 high-k dielectric films fabricated by pulsed laser ablation | Yuan, C. L.; Darmawan, P.; Chan, Mei Yin; Lee, Pooi See |
| 2008 | Lu2O3/Al2O3 gate dielectrics for germanium metal-oxide-semiconductor devices | Zhang, T.; Darmawan, P.; Setiawan, Y.; Seng, H. L.; Chan, T. K.; Osipowicz, T.; Chan, Mei Yin; Lee, Pooi See |
| 2010 | Nanocrystal formation for non-volatile memory application | Chan, Mei Yin |
