Browsing by Author Chi, Dong Zhi

Showing results 1 to 20 of 20
Issue DateTitleAuthor(s)
 2013AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free processLiu, Xinke; Zhan, Chunlei; Chan, Kwok Wai; Owen, Man Hon Samuel; Liu, Wei; Chi, Dong Zhi; Tan, Leng Seow; Chen, Kevin Jing; Yeo, Yee-Chia
2004Barrier property of TiSiN films formed by low frequency, high density inductively coupled plasma processChen, Z.; Wang, W. D.; Xu, S.; Law, S. B.; Ee, Elden Yong Chiang; Chi, Dong Zhi
2012Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack : study of Ge auto-doping and p-type Zn dopingDalapati, Goutam Kumar; Wong, Terence Kin Shun; Li, Yang; Chia, Ching Kean; Das, Anindita; Mahata, Chandreswar; Gao, Han; Chattopadhyay, Sanatan; Kumar, Manippady Krishna; Seng, Hwee Leng; Maiti, Chinmay Kumar; Chi, Dong Zhi
2001Comparative study of current-voltage characteristics of Ni and Ni(Pt)- alloy silicided p+/n diodesMangelinck, D.; Lahiri, S. K.; Chi, Dong Zhi; Lee, Pooi See; Pey, Kin Leong
2008Demonstration of Schottky barrier NMOS transistors with erbium silicided source/drain and silicon nanowire channelCui, Guangda; Lee, Pooi See; Chi, Dong Zhi; Chin, Yoke King; Hoe, Keat Mun; Tan, Eu Jin; Pey, Kin Leong; Singh, Navab; Lo, Guo-Qiang
2002Effect of ion implantation on layer inversion of Ni silicided poly-SiMangelinck, D.; Osipowicz, T.; Dai, J. Y.; Chan, L.; Lee, Pooi See; Pey, Kin Leong; Ding, Jun; Chi, Dong Zhi
 2005Effects of Si(001) surface amorphization on ErSi2 thin filmPey, Kin Leong; Lee, Pooi See; Tan, Eu Jin; Kon, M. L.; Zhang, Y. W.; Wang, W. D.; Chi, Dong Zhi
 2002Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stackMangelinck, D.; Osipowicz, T.; Dai, J. Y.; See, A.; Lee, Pooi See; Pey, Kin Leong; Ding, Jun; Chi, Dong Zhi
 2005Erbium silicidation on SiGe for advanced MOS applicationYiew, Daphne Q. F.; Setiawan, Y.; Lee, Pooi See; Chi, Dong Zhi
 2008Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistorsTan, Eu Jin; Pey, Kin Leong; Singh, Navab; Chi, Dong Zhi; Lo, Guo-Qiang; Lee, Pooi See; Hoe, Keat Mun; Chin, Yoke King; Cui, Guangda
2006Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of SiTang, L. J.; Tan, Eu Jin; Pey, Kin Leong; Chi, Dong Zhi; Lee, Pooi See
2013Integration of TaOx-based resistive-switching element and GaAs diodeChi, Dong Zhi; Xu, Z.; Tong, X.; Yoon, S. F.; Yeo, Y. C.; Dalapati, G. K.; Chia, Ching Kean
 2012Layer-by-layer oxidation of InN(0001) thin films into body-center cubic In2O3(111) by cycle rapid thermal annealingLiu, H. F.; Chi, Dong Zhi; Liu, Wei
2007Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealingSetiawan, Y.; Tan, Eu Jin; Pey, Kin Leong; Chi, Dong Zhi; Lee, Pooi See; Hoe, Keat Mun
2001New salicidation technology with Ni(Pt) alloy for MOSFETsMangelinck, D.; Chan, L.; Lee, Pooi See; Pey, Kin Leong; Ding, Jun; Chi, Dong Zhi
 2001Nickel silicide formation on Si(100) and Poly-Si with a presilicide N2 + implantationMangelinck, D.; Dai, J. Y.; See, A.; Lee, Pooi See; Pey, Kin Leong; Ding, Jun; Chi, Dong Zhi
2008Nickel-silicided Schottky junction CMOS transistors with gate-all-around nanowire channelsTang, L. J.; Ho, C. K. F.; Tan, Eu Jin; Pey, Kin Leong; Singh, Navab; Lo, Guo-Qiang; Chi, Dong Zhi; Chin, Yoke King; Lee, Pooi See
2005On the morphological changes of Ni- and Ni(Pt)-silicidesMangelinck, D.; Osipowicz, T.; Lee, Pooi See; Pey, Kin Leong; Chi, Dong Zhi
2002Phase and layer stability of Ni- and Ni(Pt)-silicides on narrow poly-Si linesMangelinck, D.; Dai, J. Y.; Chan, L.; Ding, Jun; Chi, Dong Zhi; Lee, Pooi See; Pey, Kin Leong
2006Pyramidal structural defects in erbium silicide thin filmsSrolovitz, David J.; Tan, Eu Jin; Bouville, Mathieu; Chi, Dong Zhi; Pey, Kin Leong; Lee, Pooi See; Tung, Chih Hang