Browsing by Author Dharmarasu, Nethaji

Showing results 1 to 7 of 7
Issue DateTitleAuthor(s)
 2012Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si(111) by ammonia molecular beam epitaxyDharmarasu, Nethaji; Radhakrishnan, K.; Agrawal, M.; Ravikiran, Lingaparthi; Arulkumaran, Subramaniam; Lee, Kenneth E.; Ing, Ng Geok
2011Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBEAgrawal, M.; Radhakrishnan, K.; Sun, Z. Z.; Dharmarasu, Nethaji
 2011Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBESun, Z. Z.; Radhakrishnan, K.; Agrawal, M.; Dharmarasu, Nethaji
2013Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111)Ravikiran, L.; Radhakrishnan, K.; Agrawal, M.; Munawar Basha, S.; Dharmarasu, Nethaji
2017Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxyAgrawal, Manvi; Ravikiran, Lingaparthi; Dharmarasu, Nethaji; Radhakrishnan, K.; Karthikeyan, Giri Sadasivam; Zheng, Yuanjin
 2012Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxyAgrawal, M.; Radhakrishnan, K.; Dharmarasu, Nethaji; Ravikiran, Lingaparthi
2019A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxyZheng, Y.; Agrawal, Manvi; Dharmarasu, Nethaji; Radhakrishnan, K.; Patwal, Shashank