Browsing by Author Dharmarasu, Nethaji

Showing results 1 to 11 of 11
Issue DateTitleAuthor(s)
 2012Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si(111) by ammonia molecular beam epitaxyDharmarasu, Nethaji; Radhakrishnan, K.; Agrawal, M.; Ravikiran, Lingaparthi; Arulkumaran, Subramaniam; Lee, Kenneth E.; Ing, Ng Geok
 2022Effects of Si doping well beyond the Mott transition limit in GaN epilayers grown by plasma-assisted molecular beam epitaxyLingaparthi, R.; Dharmarasu, Nethaji; Radhakrishnan, K.; Zheng, Y.
2011Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBEAgrawal, M.; Radhakrishnan, K.; Sun, Z. Z.; Dharmarasu, Nethaji
 2020In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applicationsLingaparthi, R.; Dharmarasu, Nethaji; Radhakrishnan, K.; Agrawal, Manvi
 2021Non-linear thermal resistance model for the simulation of high power GaN-based devicesGarciá-Sánchez, S.; Iñiguez-de-la-Torre, I.; Pérez, S.; Ranjan, Kumud; Agrawal, Manvi; Lingaparthi, R.; Dharmarasu, Nethaji; Radhakrishnan, K.; Arulkumaran, Subramaniam; Ng, Geok Ing; González, T.; Mateos, J.
 2011Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBESun, Z. Z.; Radhakrishnan, K.; Agrawal, M.; Dharmarasu, Nethaji
2021Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructuresLingaparthi, R.; Dharmarasu, Nethaji; Radhakrishnan, K.; Ranjan, A.; Seah, Alex Tian Long; Huo, Lili
2013Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111)Ravikiran, L.; Radhakrishnan, K.; Agrawal, M.; Munawar Basha, S.; Dharmarasu, Nethaji
2017Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxyAgrawal, Manvi; Ravikiran, Lingaparthi; Dharmarasu, Nethaji; Radhakrishnan, K.; Karthikeyan, Giri Sadasivam; Zheng, Yuanjin
 2012Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxyAgrawal, M.; Radhakrishnan, K.; Dharmarasu, Nethaji; Ravikiran, Lingaparthi
2019A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxyZheng, Y.; Agrawal, Manvi; Dharmarasu, Nethaji; Radhakrishnan, K.; Patwal, Shashank