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| Issue Date | Title | Author(s) |
 | 2011 | 1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process | Yoon, Soon Fatt; Tong, Cunzhu; Fan, Weijun; Ding, Y.; Zhao, L. J.; Xu, D. W. |
| 1998 | Analysis of optical gain and threshold current density of wurtzite InGaN/GaN/AlGaN quantum well lasers | Teo, Y. C.; Chong, T. C.; Li, M. F.; Fan, Weijun |
| 2007 | Annealing effects on the optical properties of a GaInNAs double barrier quantum well infrared photodetector | Ma, B. S.; Dang, Y. X.; Fan, Weijun; Cheah, Weng Kwong; Yoon, Soon Fatt |
| | 2017 | Anomalous Spectral Characteristics of Ultrathin sub-nm Colloidal CdSe Nanoplatelets | Bose, Sumanta; Delikanli, Savas; Yeltik, Aydan; Sharma, Manoj; Dang, Cuong; Zhang, Dao Hua; Demir, Hilmi Volkan; Erdem, Onur; Fan, Weijun |
| 1998 | Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs | Zhang, X. H.; Chua, S. J.; Fan, Weijun |
| 2006 | Band parameters and electronic structures of wurtzite ZnO and ZnO∕MgZnO quantum wells | Fan, Weijun; Xia, Jian-Bai; Agus, P. A.; Tan, Swee Tiam; Yu, S. F.; Sun, Xiaowei |
| 2019 | Band structure and optical properties of uniaxial tensile strained Ge and Ge quantum well | Fan, Weijun; Tan, Chuan Seng; Wang, Qi Jie; Nam, Donguk; Zhang, Dao Hua |
| 2019 | Band structure of Ge 1− x Sn x alloy : a full-zone 30-band k · p model | Song, Zhigang; Fan, Weijun; Tan, Chuan Seng; Wang, Qijie; Nam, Donguk; Zhang, Dao Hua; Sun, Greg |
| 2020 | Band structure of strained Ge 1− x Sn x alloy : a full-zone 30-band k · p model | Song, Zhigang; Fan, Weijun; Tan, Chuan Seng; Wang, Qijie; Nam, Donguk; Zhang, Dao Hua; Sun, Greg |
| | 2012 | Band structures and optical gain of InGaAsN/GaAsN strained quantum wells under electric field | Fan, Weijun |
| 2011 | Band structures and optical gain of strained GaAs[sub x]P[sub 1−x−y]N[sub y]/GaP quantum wells | Zhu, Yuan-Hui; Yu, Hongyu; Fan, Weijun |
| 2007 | Band structures and optical properties of InGaNAs quantum wells | Ng, Say Tyam |
| 2005 | Blueshift of optical band gap in ZnO thin films grown by metal-organic chemical-vapor deposition | Chen, B. J.; Kwok, H. S.; Zhang, X. H.; Chua, S. J.; Tan, Swee Tiam; Sun, Xiaowei; Fan, Weijun |
| 1998 | Characteristics of InGaAs quantum dot infrared photodetectors | Xu, S. J.; Chua, S. J.; Mei, T.; Wang, X. C.; Zhang, X. H.; Karunasiri, G.; Fan, Weijun; Wang, C. H.; Jiang, J.; Wang, S.; Xie, X. G. |
| 2015 | Comparative analysis of opto-electronic performance of aluminium and silver nanoporous and nano-wired layers | Marus, Mikita; Hubarevich, Aliaksandr; Wang, Hong; Mukha, Yauhen; Smirnov, Aliaksandr; Huang, Hui; Sun, Xiao Wei; Fan, Weijun |
| 2020 | Comparative study of U- and U4-split-ring resonator-based metasurfaces for sensing in near- and mid-infrared region | Suo, Fei; Tong, Jinchao; Tobing, Landobasa Yosef Mario; Fan, Weijun; Xu, Zhengji; Zhang, Dao Hua |
| 2005 | Comparison of electronic band structure and optical transparency conditions of InxGa1−xAs1−yNy∕GaAs quantum wells calculated by 10-band, 8-band, and 6-band k∙p models | Ng, S.; Dang, Y.; Yoon, S.; Fan, Weijun |
| 2002 | Comparison of nitrogen compositions in the as-grown GaN[sub x]As[sub 1−x] on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy | Fan, Weijun; Yoon, Soon Fatt; Ng, T. K.; Wang, S. Z.; Loke, Wan Khai; Liu, R.; Wee, A. |
| 2007 | Design of In[sub x]Ga[sub 1−x]As[sub 1−y]N[sub y]∕AlAs quantum cascade structures for 3.4 μm intersubband emission | Dang, Y. X.; Fan, Weijun |
| 2016 | Design, simulations, and optimizations of mid-infrared multiple quantum well LEDs | Ding, Ying; Meriggi, Laura; Steer, Matthew; Fan, Weijun; Bulashevich, Kirill; Thayne, Iain; Macgregor, Calum; Ironside, Charlie; Sorel, Marc |
