Browsing by Author Fitzgerald, Eugene A.
Showing results 1 to 20 of 22
next >
| Issue Date | Title | Author(s) | |
|---|---|---|---|
| 2013 | Al2O3 interface engineering of germanium epitaxial layer grown directly on silicon | Fitzgerald, Eugene A.; Tan, Yew Heng; Yew, Kwang Sing; Lee, Kwang Hong; Chang, Yao-Jen; Chen, Kuan-Neng; Ang, Diing Shenp; Tan, Chuan Seng | |
 | 2015 | AlN-AlN layer bonding and it's thermal characteristics | Shuyu, Bao; Lee, Kwang Hong; Chong, Gang Yih; Fitzgerald, Eugene A.; Tan, Chuan Seng |
| 2012 | Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission | Liang, Y. Y.; Ngo, C. Y.; Fitzgerald, Eugene A.; Yoon, Soon Fatt; Loke, Wan Khai | |
| 2018 | Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding | Abdul Kadir; Wang, Yue; Lee, Kenneth E.; Tan, Chuan Seng; Chua, Soo Jin; Fitzgerald, Eugene A.; Zhang, Li; Lee, Kwang Hong |
| 2015 | Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient | Lee, Kwang Hong; Bao, Shuyu; Chong, Gang Yih; Tan, Yew Heng; Fitzgerald, Eugene A.; Tan, Chuan Seng |
| 2014 | Fabrication and characterization of germanium-on-insulator through epitaxy, bonding, and layer transfer | Lee, Kwang Hong; Bao, Shuyu; Chong, Gang Yih; Tan, Yew Heng; Fitzgerald, Eugene A.; Tan, Chuan Seng |
| 2018 | A fully integrated Class-J GaN MMIC power amplifier for 5-GHz WLAN 802.11ax application | Liu, Bei; Mao, Mengda; Boon, Chirn Chye; Choi, Pilsoon; Khanna, Devrishi; Fitzgerald, Eugene A. |
| 2013 | Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) chamber | Fitzgerald, Eugene A.; Lee, Kwang Hong; Jandl, Adam; Tan, Yew Heng; Tan, Chuan Seng |
| 2017 | Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications | Lee, Kwang Hong; Bao, Shuyu; Lin, Yiding; Wang, Yue; Li, Wei; Zhang, Lin; Michel, Jurgen; Fitzgerald, Eugene A.; Tan, Chuan Seng; Anantha, P. |
| 2020 | High-frequency characteristics of InGaP/GaAs double heterojunction bipolar transistor epitaxially grown on 200 mm Ge/Si wafers | Loke, Wan Khai; Wang, Yue; Lee, Kwang Hong; Liu, Zhihong; Xie, Hanlin; Chiah, Siau Ben; Lee, Kenneth Eng Kian; Zhou, Xing; Tan, Chuan Seng; Ng, Geok Ing; Fitzgerald, Eugene A.; Yoon, Soon Fatt |
| 2018 | A highly efficient fully integrated GaN power amplifier for 5-GHz WLAN 802.11ac application | Liu, Bei; Mao, Mengda; Khanna, Devrishi; Choi, Pilsoon; Boon, Chirn Chye; Fitzgerald, Eugene A. |
| 2011 | InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrates (GeOI) using molecular beam epitaxy | Fitzgerald, Eugene A.; Liang, Y. Y.; Ngo, C. Y.; Yoon, Soon Fatt; Loke, Wan Khai | |
| 2017 | The integration of InGaP LEDs with CMOS on 200 mm silicon wafers | Wang, Bing; Lee, Kwang Hong; Wang, Cong; Wang, Yue; Made, Riko I.; Sasangka, Wardhana Aji; Nguyen, Viet Cuong; Lee, Kenneth Eng Kian; Tan, Chuan Seng; Yoon, Soon Fatt; Fitzgerald, Eugene A.; Michel, Jurgen |
| 2002 | Interfacial reacions of Ni on Si1-xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing | Pey, Kin Leong; Chattopadhyay, Sujay; Lee, Pooi See; Zhao, H. B.; Choi, W. K.; Antoniadis, D. A.; Fitzgerald, Eugene A. |
| 2013 | Low temperature direct wafer bonding of GaAs to Si via plasma activation | Xu, D. W.; Fitzgerald, Eugene A.; Yeo, Chiew Yong; Yoon, Soon Fatt |
| 2017 | Low-threshold optically pumped lasing in highly strained germanium nanowires | Bao, Shuyu; Kim, Daeik; Onwukaeme, Chibuzo; Gupta, Shashank; Saraswat, Krishna; Lee, Kwang Hong; Kim, Yeji; Min, Dabin; Jung, Yongduck; Qiu, Haodong; Wang, Hong; Fitzgerald, Eugene A.; Tan, Chuan Seng; Nam, Donguk |
| 2017 | Monolithic integration of Si-CMOS and III-V-on-Si through direct wafer bonding process | Lee, Kwang Hong; Wang, Yue; Wang, Bing; Zhang, Li; Sasangka, Wardhana Aji; Goh, Shuh Chin; Bao, Shuyu; Lee, Kenneth E.; Fitzgerald, Eugene A.; Tan, Chuan Seng |
| 2017 | A novel 2.6–6.4 GHz highly integrated broadband GaN power amplifier | Liu, Bei; Mao, Mengda; Khanna, Devrishi; Boon, Chirn-Chye; Choi, Pilsoon; Fitzgerald, Eugene A. |
| 2016 | Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates | Wang, Bing; Wang, Cong; Lee, Kwang Hong; Bao, Shuyu; Lee, Kenneth Eng Kian; Tan, Chuan Seng; Yoon, Soon Fatt; Fitzgerald, Eugene A.; Michel, Jurgen |
| 2016 | Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer | Lee, Kwang Hong; Bao, Shuyu; Wang, Bing; Wang, Cong; Yoon, Soon Fatt; Michel, Jurgen; Fitzgerald, Eugene A.; Tan, Chuan Seng |