Browsing by Author Kang, Yuye

Showing results 1 to 3 of 3
Issue DateTitleAuthor(s)
 2018Germanium-tin (GeSn) p-channel fin field-effect transistor fabricated on a novel GeSn-on-insulator substrateLei, Dian; Lee, Kwang Hong; Huang, Yi-Chiau; Wang, Wei; Masudy-Panah, Saeid; Yadav, Sachin; Kumar, Annie; Dong, Yuan; Kang, Yuye; Xu, Shengqiang; Wu, Ying; Tan, Chuan Seng; Gong, Xiao; Yeo, Yee-Chia
 2021Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire widthKang, Yuye; Xu, Shengqiang; Han, Kaizhen; Kong, Eugene Y.-J.; Song, Zhigang; Luo, Sheng; Kumar, Annie; Wang, Chengkuan; Fan, Weijun; Liang, Gengchiau; Gong, Xiao
2018Strain relaxation of germanium-tin (GeSn) finsKang, Yuye; Huang, Yi-Chiau; Lee, Kwang Hong; Bao, Shuyu; Wang, Wei; Lei, Dian; Masudy-Panah, Saeid; Dong, Yuan; Wu, Ying; Xu, Shengqiang; Tan, Chuan Seng; Gong, Xiao; Yeo, Yee-Chia