| Issue Date | Title | Author(s) |
 | 2013 | Effect of exposure to ultraviolet-activated oxygen on the electrical characteristics of amorphous indium gallium zinc oxide thin film transistors | Liu, P.; Li, X. D.; Liu, Z.; Wong, J. I.; Liu, Y.; Leong, K. C.; Chen, Tupei |
| 2013 | Effects of free electrons and quantum confinement in ultrathin ZnO films : a comparison between undoped and Al-doped ZnO | Li, X. D.; Liu, P.; Liu, Y.; Leong, K. C.; Chen, Tupei |
| 2014 | Influence of localized surface plasmon resonance and free electrons on the optical properties of ultrathin Au films : a study of the aggregation effect | Li, X. D.; Chen, T. P.; Liu, Y.; Leong, K. C. |
| 2014 | Realization of write-once-read-many-times memory device with O2 plasma-treated indium gallium zinc oxide thin film | Chen, Tupei; Liu, Pan; Li, X. D.; Liu, Z.; Wong, J. I.; Liu, Y.; Leong, K. C. |
| 2013 | Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias | Liu, P.; Li, X. D.; Liu, Z.; Wong, J. I.; Liu, Y.; Leong, K. C.; Chen, Tupei |
| 2014 | A study on the evolution of dielectric function of ZnO thin films with decreasing film thickness | Li, X. D.; Chen, T. P.; Liu, P.; Liu, Y.; Liu, Z.; Leong, K. C. |
| 2015 | Thickness dependence of optical properties of amorphous indium gallium zinc oxide thin films : effects of free-electrons and quantum confinement | Li, X. D.; Chen, T. P.; Liu, Y.; Chen, Siyuan |
