Browsing by Author Lingaparthi, R.

Showing results 1 to 4 of 4
Issue DateTitleAuthor(s)
 2022Effects of Si doping well beyond the Mott transition limit in GaN epilayers grown by plasma-assisted molecular beam epitaxyLingaparthi, R.; Dharmarasu, Nethaji; Radhakrishnan, K.; Zheng, Y.
 2020In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applicationsLingaparthi, R.; Dharmarasu, Nethaji; Radhakrishnan, K.; Agrawal, Manvi
 2021Non-linear thermal resistance model for the simulation of high power GaN-based devicesGarciá-Sánchez, S.; Iñiguez-de-la-Torre, I.; Pérez, S.; Ranjan, Kumud; Agrawal, Manvi; Lingaparthi, R.; Dharmarasu, Nethaji; Radhakrishnan, K.; Arulkumaran, Subramaniam; Ng, Geok Ing; González, T.; Mateos, J.
2021Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructuresLingaparthi, R.; Dharmarasu, Nethaji; Radhakrishnan, K.; Ranjan, A.; Seah, Alex Tian Long; Huo, Lili