Browsing by Author Liu, W. J.
Showing results 1 to 8 of 8
| Issue Date | Title | Author(s) | |
|---|---|---|---|
 | 2012 | Characteristics of a single-layer graphene field effect transistor with UV/ozone treatment | Tran, Xuan Anh; Yu, Hongyu; Sun, Xiaowei; Liu, W. J.; Liu, X. B.; Wei, J. |
| 2012 | Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping | Wu, L.; Wang, Zhongrui; Zhu, W. G.; Du, A. Y.; Fang, Z.; Tran, Xuan Anh; Liu, W. J.; Zhang, K. L.; Yu, Hongyu | |
| 2012 | Mechanism of different switching directions in graphene oxide based RRAM | Wang, Zhongrui; Tjoa, Verawati; Wu, L.; Liu, W. J.; Fang, Z.; Tran, Xuan Anh; Wei, J.; Zhu, W. G.; Yu, Hongyu |
| 2012 | Positive bias-induced Vth instability in graphene field effect transistors | Liu, W. J.; Fang, Z.; Wang, Z. R.; Wang, F.; Wu, L.; Zhang, J. F.; Wei, J.; Zhu, H. L.; Sun, Xiaowei; Tran, Xuan Anh; Ng, Geok Ing; Yu, Hongyu | |
| 2012 | A self-rectifying A1Oy bipolar RRAM with sub-50μA set/reset current for cross-bar architecture | Liu, W. J.; Yeo, Y. C.; Nguyen, B. Y.; Tran, Xuan Anh; Zhu, Wei; Yu, Hongyu | |
| 2012 | A self-rectifying HfOx-based unipolar RRAM with NiSi electrode | Tran, Xuan Anh; Gao, Bin; Yu, Hongyu; Zhu, W. G.; Kang, J. F.; Liu, W. J.; Fang, Z.; Wang, Z. R.; Yeo, Y. C.; Nguyen, B. Y.; Li, M. F. | |
| 2013 | A self-rectifying unipolar HfOx based RRAM using doped germanium bottom electrode | Liu, W. J.; Tran, Xuan Anh; Sun, Xiaowei; Yu, Hongyu |
| 2012 | Vth shift in single-layer graphene field-effect transistors and its correlation with Raman inspection | Wei, J.; Liu, W. J.; Fang, Z.; Wang, Z. R.; Wang, F.; Wu, L.; Zhang, J. F.; Zhu, H. L.; Sun, Xiaowei; Tran, Xuan Anh; Yu, Hongyu |