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| Issue Date | Title | Author(s) |
| | 2012 | Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission | Liang, Y. Y.; Ngo, C. Y.; Fitzgerald, Eugene A.; Yoon, Soon Fatt; Loke, Wan Khai |
| | 2021 | CMOS-compatible Ti/TiN/Al refractory ohmic contact for GaAs heterojunction bipolar transistors grown on Ge/Si substrate | Wang, Yue; Loke, Wan Khai; Gao, Yu; Lee, Kwang Hong; Lee, Kenneth Eng Kian; Gan, Chee Lip; Tan, Chuan Seng; Fitzgerald, Eugene A.; Yoon, Soon Fatt |
 | 2002 | Comparison of nitrogen compositions in the as-grown GaN[sub x]As[sub 1−x] on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy | Fan, Weijun; Yoon, Soon Fatt; Ng, T. K.; Wang, S. Z.; Loke, Wan Khai; Liu, R.; Wee, A. |
| | 2012 | Effect of growth temperature on the epitaxy strain relaxation and the tilt of InxAl1−x as graded layer grown by solid-source molecular beam epitaxy | Loke, Wan Khai; Tan, Kian Hua; Wicaksono, Satrio; Yoon, Soon Fatt; Owen, Man Hon Samuel; Yeo, Yee-Chia |
| 2002 | Effect of In and N incorporation on the properties of lattice-matched GaInNAs/GaAs grown by radio frequency plasma-assisted solid-source molecular beam epitaxy | Loke, Wan Khai; Yoon, Soon Fatt; Ng, T. K.; Wang, S. Z.; Fan, Weijun |
| 2017 | Effect of in situ annealing on the structural and electrical properties and infrared photodetection of III-Sb on GaAs using interfacial misfit array | Jia, Bo Wen; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt |
| 2015 | Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations | Jia, Bo Wen; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt |
| 2016 | Formation of periodic interfacial misfit dislocation array at the InSb/GaAs interface via surface anion exchange | Jia, Bo Wen; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt |
| 2007 | GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm | Ma, B. S.; Fan, Weijun; Dang, Y. X.; Cheah, Weng Kwong; Loke, Wan Khai; Liu, W.; Li, D. S.; Yoon, Soon Fatt; Zhang, Dao Hua; Wang, H.; Tung, Chih Hang |
| 2018 | Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer | Jia, Bo Wen; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt |
| 2018 | Growth and characterization of InSb on (1 0 0) Si for mid-infrared application | Jia, Bo Wen; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt |
| 2020 | High-frequency characteristics of InGaP/GaAs double heterojunction bipolar transistor epitaxially grown on 200 mm Ge/Si wafers | Loke, Wan Khai; Wang, Yue; Lee, Kwang Hong; Liu, Zhihong; Xie, Hanlin; Chiah, Siau Ben; Lee, Kenneth Eng Kian; Zhou, Xing; Tan, Chuan Seng; Ng, Geok Ing; Fitzgerald, Eugene A.; Yoon, Soon Fatt |
| 2002 | Improved GaN[sub x]As[sub 1−x] quality grown by molecular beam epitaxy with dispersive nitrogen source | Wang, S. Z.; Yoon, Soon Fatt; Loke, Wan Khai; Ng, T. K.; Fan, Weijun |
| 2007 | Improvement of GaInNAs p-i-n photodetector responsivity by antimony incorporation | Loke, Wan Khai; Yoon, Soon Fatt; Tan, K. H.; Wicaksono, Satrio; Fan, Weijun |
| 2018 | In 0.49 Ga 0.51 P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates : effects of base thickness, base and sub-collector doping concentrations | Wang, Yue; Lee, Kwang Hong; Loke, Wan Khai; Chiah, Ben Siau; Zhou, Xing; Yoon, Soon Fatt; Tan, Chuan Seng; Fitzgerald, Eugene |
 | 2022 | In0.3Ga0.7As heterojunction bipolar transistor grown on GeSi substrate for high-frequency application | Loke, Wan Khai; Wang, Yue; Gao, Yu; Khaw, Lina; Lee, Kenneth Eng Kian; Tan, Chuan Seng; Fitzgerald, Eugene A.; Yoon, Soon Fatt |
| | 2011 | InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrates (GeOI) using molecular beam epitaxy | Fitzgerald, Eugene A.; Liang, Y. Y.; Ngo, C. Y.; Yoon, Soon Fatt; Loke, Wan Khai |
| 2016 | InGaP grown on Ge (100) by molecular beam epitaxy: a spectroscopic ellipsometry study | D’Costa, Vijay Richard; Loke, Wan Khai; Zhou, Qian; Yoon, Soon Fatt; Yeo, Yee-Chia |
| 2018 | Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength region | Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt; Jia, Bo Wen |
| 2017 | Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs) | Kumar, Annie; Lee, Shuh-Ying; Yadav, Sachin; Tan, Kian Hua; Loke, Wan Khai; Dong, Yuan; Lee, Kwang Hong; Wicaksono, Satrio; Liang, Gengchiau; Yoon, Soon-Fatt; Antoniadis, Dimitri; Yeo, Yee-Chia; Gong, Xiao |
