Browsing by Author Loke, Wan Khai


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Issue DateTitleAuthor(s)
 2012Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emissionLiang, Y. Y.; Ngo, C. Y.; Fitzgerald, Eugene A.; Yoon, Soon Fatt; Loke, Wan Khai
2002Comparison of nitrogen compositions in the as-grown GaN[sub x]As[sub 1−x] on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopyFan, Weijun; Yoon, Soon Fatt; Ng, T. K.; Wang, S. Z.; Loke, Wan Khai; Liu, R.; Wee, A.
 2012Effect of growth temperature on the epitaxy strain relaxation and the tilt of InxAl1−x as graded layer grown by solid-source molecular beam epitaxyLoke, Wan Khai; Tan, Kian Hua; Wicaksono, Satrio; Yoon, Soon Fatt; Owen, Man Hon Samuel; Yeo, Yee-Chia
2002Effect of In and N incorporation on the properties of lattice-matched GaInNAs/GaAs grown by radio frequency plasma-assisted solid-source molecular beam epitaxyLoke, Wan Khai; Yoon, Soon Fatt; Ng, T. K.; Wang, S. Z.; Fan, Weijun
2017Effect of in situ annealing on the structural and electrical properties and infrared photodetection of III-Sb on GaAs using interfacial misfit arrayJia, Bo Wen; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt
2015Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocationsJia, Bo Wen; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt
2016Formation of periodic interfacial misfit dislocation array at the InSb/GaAs interface via surface anion exchangeJia, Bo Wen; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt
2007GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μmMa, B. S.; Fan, Weijun; Dang, Y. X.; Cheah, Weng Kwong; Loke, Wan Khai; Liu, W.; Li, D. S.; Yoon, Soon Fatt; Zhang, Dao Hua; Wang, H.; Tung, Chih Hang
2018Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb bufferJia, Bo Wen; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt
2018Growth and characterization of InSb on (1 0 0) Si for mid-infrared applicationJia, Bo Wen; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt
2020High-frequency characteristics of InGaP/GaAs double heterojunction bipolar transistor epitaxially grown on 200 mm Ge/Si wafersLoke, Wan Khai; Wang, Yue; Lee, Kwang Hong; Liu, Zhihong; Xie, Hanlin; Chiah, Siau Ben; Lee, Kenneth Eng Kian; Zhou, Xing; Tan, Chuan Seng; Ng, Geok Ing; Fitzgerald, Eugene A.; Yoon, Soon Fatt
2002Improved GaN[sub x]As[sub 1−x] quality grown by molecular beam epitaxy with dispersive nitrogen sourceWang, S. Z.; Yoon, Soon Fatt; Loke, Wan Khai; Ng, T. K.; Fan, Weijun
2007Improvement of GaInNAs p-i-n photodetector responsivity by antimony incorporationLoke, Wan Khai; Yoon, Soon Fatt; Tan, K. H.; Wicaksono, Satrio; Fan, Weijun
2018In 0.49 Ga 0.51 P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates : effects of base thickness, base and sub-collector doping concentrationsWang, Yue; Lee, Kwang Hong; Loke, Wan Khai; Chiah, Ben Siau; Zhou, Xing; Yoon, Soon Fatt; Tan, Chuan Seng; Fitzgerald, Eugene
 2011InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrates (GeOI) using molecular beam epitaxyFitzgerald, Eugene A.; Liang, Y. Y.; Ngo, C. Y.; Yoon, Soon Fatt; Loke, Wan Khai
2016InGaP grown on Ge (100) by molecular beam epitaxy: a spectroscopic ellipsometry studyD’Costa, Vijay Richard; Loke, Wan Khai; Zhou, Qian; Yoon, Soon Fatt; Yeo, Yee-Chia
2018Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength regionTan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt; Jia, Bo Wen
2017Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs)Kumar, Annie; Lee, Shuh-Ying; Yadav, Sachin; Tan, Kian Hua; Loke, Wan Khai; Dong, Yuan; Lee, Kwang Hong; Wicaksono, Satrio; Liang, Gengchiau; Yoon, Soon-Fatt; Antoniadis, Dimitri; Yeo, Yee-Chia; Gong, Xiao
2006Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs[sub 1−x]N[sub x] on GaAsCheah, Weng Kwong; Fan, Weijun; Yoon, Soon Fatt; Loke, Wan Khai; Liu, R.; Wee, A. T. S.
2013Low temperature grown GaNAsSb : a promising material for photoconductive switch applicationLi, D. S.; Saadsaoud, N.; Tripon-Canseliet, C.; Lampin, J. F.; Decoster, D.; Chazelas, J.; Yoon, Soon Fatt; Wicaksono, Satrio; Loke, Wan Khai; Tan, Kian Hua