Browsing by Author Ng, G. I.

Showing results 1 to 6 of 6
Issue DateTitleAuthor(s)
2015Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)Anand, M. J.; Ng, G. I.; Arulkumaran, S.; Manoj Kumar, C. M.; Ranjan, K.; Vicknesh, S.; Foo, S. C.; Syamal, B.; Zhou, X.
2015Electron velocity of 6 × 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistorsArulkumaran, S.; Ng, G. I.; Manoj Kumar, C. M.; Ranjan, K.; Teo, K. L.; Shoron, O. F.; Rajan, S.; Bin Dolmanan, S.; Tripathy, S.
2015Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxyRavikiran, L.; Dharmarasu, N.; Radhakrishnan, K.; Agrawal, M.; Yiding, Lin; Arulkumaran, S.; Vicknesh, S.; Ng, G. I.
 2011High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on siliconVicknesh, S.; Ng, G. I.; Liu, Z. H.; Selvaraj, S. L.; Egawa, T.; Arulkumaran, Subramaniam
2014High-frequency microwave noise characteristics of InAlN/GaN high-electron mobility transistors on Si (111) substrateArulkumaran, Subramaniam; Ranjan, K.; Ng, G. I.; Manoj Kumar, C. M.; Vicknesh, S.; Dolmanan, S. B.; Tripathy, S.
 2013Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stackAnand, M. J.; Ng, G. I.; Vicknesh, S.; Arulkumaran, Subramaniam; Ranjan, K.