Browsing by Author Ng, Geok Ing


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Issue DateTitleAuthor(s)
2012AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)Dolmanan, S. B.; Kajen, R. S.; Bera, L. K.; Teo, S. L.; Wang, W. Z.; Li, H.; Lee, D.; Han, S.; Tripathy, Sudhiranjan; Lin, Vivian Kaixin; Tan, Joyce Pei Ying; Kumar, M. Krishna; Arulkumaran, Subramaniam; Ng, Geok Ing; Vicknesh, Sahmuganathan; Todd, Shane; Lo, Guo-Qiang
2013Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on siliconYe, G.; Wang, Hong; Arulkumaran, Subramaniam; Ng, Geok Ing; Hofstetter, R.; Li, Y.; Anand, M. J.; Ang, K. S.; Bryan, Maung Ye Kyaw Thu; Foo, Siew Chuen
2014Band alignment between GaN and ZrO2 formed by atomic layer depositionYe, Gang; Wang, Hong; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Liu, Zhi Hong; Ang, Kian Siong
2019Boron nitride coated three-dimensional graphene as an electrically insulating electromagnetic interference shieldNgoh, Zhi Lin; Leong, Fei Ni; Tay, Roland Yijie; Whiteside, Matthew David; Chng, Soon Siang; Yu, Jong Jen; Tsang, Siu Hon; Tan, Dunlin; Ng, Geok Ing; Teo, Edwin Hang Tong
2018Characteristic temperature of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laserLi, Xiang; Wang, Hong; Qiao, Zhongliang; Guo, Xin; Wang, Wanjun; Ng, Geok Ing; Liu, Chongyang
 2014A Compact Model for Generic MIS-HEMTs Based on the Unified 2DEG Density ExpressionZhang, Junbin; Syamal, Binit; Zhou, Xing; Arulkumaran, Subramaniam; Ng, Geok Ing
 2012Compact true time delay line with partially shielded coplanar waveguide transmission linesLim, Hong Yi; Ng, Geok Ing; Leong, Yoke Choy
2015Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistorsLi, Yang; Ng, Geok Ing; Arulkumaran, Subramaniam; Ye, Gang; Manoj Kumar, Chandra Mohan; Anand, Mulagumoottil Jesudas; Liu, Zhi Hong
2017Conversion between EIT and Fano spectra in a microring-Bragg grating coupled-resonator systemZhang, Zecen; Ng, Geok Ing; Hu, Ting; Qiu, Haodong; Guo, Xin; Wang, Wanjun; Rouifed, Mohamed Saïd; Liu, Chongyang; Wang, Hong
2013Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal-oxide-semiconductor-compatible non-gold metal stackArulkumaran, Subramaniam; Ng, Geok Ing; Vicknesh, Sahmuganathan; Wang, Hong; Ang, Kian Siong; Kumar, Chandramohan Manoj; Teo, Khoon Leng; Ranjan, Kumud
2000Design and fabrication of heterojunction bipolar transistors (HBT)Pan, Yang
1999Design and fabrication of III-V RF devices for MMIC applicationsAng, Kian Siong
2012Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrateArulkumaran, Subramaniam; Ng, Geok Ing; Vicknesh, Sahmuganathan; Wang, Hong; Ang, Kian Siong; Tan, Joyce Pei Ying; Lin, Vivian Kaixin; Todd, Shane; Lo, Guo-Qiang; Tripathy, Sudhiranjan
2015Effect of surface pretreatment on interfacial chemical bonding states of atomic layer deposited ZrO2 on AlGaNYe, Gang; Wang, Hong; Ng, Serene Lay Geok; Ji, Rong; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Liu, Zhi Hong; Ang, Kian Siong
 2012Effective suppression of current collapse in both E- and D-mode AlGaN/GaN HEMTs on Si by [(NH4)2Sx] passivationVicknesh, Sahmuganathan; Arulkumaran, Subramaniam; Ng, Geok Ing
2018Experimental demonstration of thermally tunable Fano and EIT resonances in coupled resonant system on SOI platformLittlejohns, Callum George; Zhang, Zecen; Ng, Geok Ing; Hu, Ting; Qiu, Haodong; Guo, Xin; Wang, Wanjun; Liu, Chongyang; Sia, Jiaxu; Zhou, Jin; Nedeljkovic, Milos; Reed, Graham T.; Wang, Hong; Mohamed Saïd Rouifed
1997Fabrication and characterisation of AlGaAs/GaAs heterojunction bipolar transistors (HBTs)Wang, Hong
2019GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substratesDeki, M.; Nitta, S.; Honda, Y.; Amano, H.; Sandupatla, Abhinay; Arulkumaran, Subramanian; Ng, Geok Ing; Ranjan, Kumud
 2012GaN-on-Silicon integration technologyNg, Geok Ing; Arulkumaran, Subramaniam; Vicknesh, Sahmuganathan; Wang, H.; Ang, K. S.; Kumar, C. M. Manoj; Ranjan, K.; Lo, Guo-Qiang; Tripathy, Sudhiranjan; Boon, Chirn Chye; Lim, Wei Meng
 2014High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on siliconRanjan, Kumud; Arulkumaran, Subramaniam; Ng, Geok Ing; Vicknesh, Sahmuganathan