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| Issue Date | Title | Author(s) |
 | 2012 | AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111) | Dolmanan, S. B.; Kajen, R. S.; Bera, L. K.; Teo, S. L.; Wang, W. Z.; Li, H.; Lee, D.; Han, S.; Tripathy, Sudhiranjan; Lin, Vivian Kaixin; Tan, Joyce Pei Ying; Kumar, M. Krishna; Arulkumaran, Subramaniam; Ng, Geok Ing; Vicknesh, Sahmuganathan; Todd, Shane; Lo, Guo-Qiang |
| 2013 | Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon | Ye, G.; Wang, Hong; Arulkumaran, Subramaniam; Ng, Geok Ing; Hofstetter, R.; Li, Y.; Anand, M. J.; Ang, K. S.; Bryan, Maung Ye Kyaw Thu; Foo, Siew Chuen |
| 2014 | Band alignment between GaN and ZrO2 formed by atomic layer deposition | Ye, Gang; Wang, Hong; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Liu, Zhi Hong; Ang, Kian Siong |
| 2019 | Boron nitride coated three-dimensional graphene as an electrically insulating electromagnetic interference shield | Ngoh, Zhi Lin; Leong, Fei Ni; Tay, Roland Yijie; Whiteside, Matthew David; Chng, Soon Siang; Yu, Jong Jen; Tsang, Siu Hon; Tan, Dunlin; Ng, Geok Ing; Teo, Edwin Hang Tong |
| 2018 | Characteristic temperature of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser | Li, Xiang; Wang, Hong; Qiao, Zhongliang; Guo, Xin; Wang, Wanjun; Ng, Geok Ing; Liu, Chongyang |
| | 2014 | A Compact Model for Generic MIS-HEMTs Based on the Unified 2DEG Density Expression | Zhang, Junbin; Syamal, Binit; Zhou, Xing; Arulkumaran, Subramaniam; Ng, Geok Ing |
| | 2012 | Compact true time delay line with partially shielded coplanar waveguide transmission lines | Lim, Hong Yi; Ng, Geok Ing; Leong, Yoke Choy |
| 2015 | Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors | Li, Yang; Ng, Geok Ing; Arulkumaran, Subramaniam; Ye, Gang; Manoj Kumar, Chandra Mohan; Anand, Mulagumoottil Jesudas; Liu, Zhi Hong |
| 2017 | Conversion between EIT and Fano spectra in a microring-Bragg grating coupled-resonator system | Zhang, Zecen; Ng, Geok Ing; Hu, Ting; Qiu, Haodong; Guo, Xin; Wang, Wanjun; Rouifed, Mohamed Saïd; Liu, Chongyang; Wang, Hong |
| 2020 | Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate | Whiteside, Matthew; Arulkumaran, Subramaniam; Dikme, Yilmaz; Sandupatla, Abhinay; Ng, Geok Ing |
| 2013 | Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal-oxide-semiconductor-compatible non-gold metal stack | Arulkumaran, Subramaniam; Ng, Geok Ing; Vicknesh, Sahmuganathan; Wang, Hong; Ang, Kian Siong; Kumar, Chandramohan Manoj; Teo, Khoon Leng; Ranjan, Kumud |
 | 2000 | Design and fabrication of heterojunction bipolar transistors (HBT) | Pan, Yang |
| 1999 | Design and fabrication of III-V RF devices for MMIC applications | Ang, Kian Siong |
| 2012 | Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate | Arulkumaran, Subramaniam; Ng, Geok Ing; Vicknesh, Sahmuganathan; Wang, Hong; Ang, Kian Siong; Tan, Joyce Pei Ying; Lin, Vivian Kaixin; Todd, Shane; Lo, Guo-Qiang; Tripathy, Sudhiranjan |
| 2015 | Effect of surface pretreatment on interfacial chemical bonding states of atomic layer deposited ZrO2 on AlGaN | Ye, Gang; Wang, Hong; Ng, Serene Lay Geok; Ji, Rong; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Liu, Zhi Hong; Ang, Kian Siong |
| | 2012 | Effective suppression of current collapse in both E- and D-mode AlGaN/GaN HEMTs on Si by [(NH4)2Sx] passivation | Vicknesh, Sahmuganathan; Arulkumaran, Subramaniam; Ng, Geok Ing |
| 2021 | Enhancing the piezoelectric modulus of wurtzite AlN by ion beam strain engineering | Fiedler, Holger; Leveneur, Jérôme; Mitchell, David R. G.; Arulkumaran, Subramaniam; Ng, Geok Ing; Alphones, Arokiaswami; Kennedy, John |
| 2018 | Experimental demonstration of thermally tunable Fano and EIT resonances in coupled resonant system on SOI platform | Littlejohns, Callum George; Zhang, Zecen; Ng, Geok Ing; Hu, Ting; Qiu, Haodong; Guo, Xin; Wang, Wanjun; Liu, Chongyang; Sia, Jiaxu; Zhou, Jin; Nedeljkovic, Milos; Reed, Graham T.; Wang, Hong; Mohamed Saïd Rouifed |
| 1997 | Fabrication and characterisation of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) | Wang, Hong |
| 2019 | GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates | Deki, M.; Nitta, S.; Honda, Y.; Amano, H.; Sandupatla, Abhinay; Arulkumaran, Subramanian; Ng, Geok Ing; Ranjan, Kumud |
