Browsing by Author Radhakrishnan, K.


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Issue DateTitleAuthor(s)
2000Characterization of InP based high electron mobility transistor structures grown by solid source MBEToo, Patrick Heng Kwee.
 2012Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si(111) by ammonia molecular beam epitaxyDharmarasu, Nethaji; Radhakrishnan, K.; Agrawal, M.; Ravikiran, Lingaparthi; Arulkumaran, Subramaniam; Lee, Kenneth E.; Ing, Ng Geok
2003Development of deep submicron HEMT MMIC for millimetre-wave applicationsNg, Geok Eng; Yuan, Xiaocong; Yoon, Soon Fatt; Radhakrishnan, K.; Law, Choi Look; Ooi, Boon Siew; Prasad Krishnamachar
2002Development of high dielectric constant SrTiO3 thin filmsLoo, Martin Chih Chien.
2002Development of phosphorus containing compound semiconductor hetero-structures for high-speed applicationsZheng, Haiqun.
1997Development of thin film structures for heterojunction bipolar transistors (HBTs)Radhakrishnan, K.; Yoon, Soon Fatt.; Tse, Man Siu.
2002Dry plasma etching of III-V semiconductors for monolithic microwave integrated circuits fabricationChen, Yuwen.
2009Extraction of diffusion length using junction-less EBICOng, Vincent K. S.; Tan, Chee Chin.; Radhakrishnan, K.
2001Fabrication and characterization of high frequency devices for monolithic microwave integrated circuits (MMICS)Lau, Kien Mun.
2003Fabrication and characterization of microelectronic devices, circuits and systems VIRadhakrishnan, K.
2007Fabrication of vertical side-wall submicron emitter for heterojunction bipolar transistorsRadhakrishnan, K.; Wang, Hong
2011Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBEAgrawal, M.; Radhakrishnan, K.; Sun, Z. Z.; Dharmarasu, Nethaji
2015Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxyRavikiran, L.; Dharmarasu, N.; Radhakrishnan, K.; Agrawal, M.; Yiding, Lin; Arulkumaran, S.; Vicknesh, S.; Ng, G. I.
2003Growth and characterization of metamorphic layer structures for high electron mobility transistorsYuan, Kaihua.
2002Monolithic integration of heterojunction bipolar transistors and high electron mobility transistorsRadhakrishnan, K.; Ng, Geok Ing.; Yoon, Soon Fatt.
2015Optical bandgap widening and phase transformation of nitrogen doped cupric oxideMasudy-Panah, Saeid; Radhakrishnan, K.; Kumar, Avishek; Wong, Ten It; Yi, Ren; Dalapati, Goutam Kumar
2016An opto-mechanical coupled-ring reflector driven by optical force for lasing wavelength controlRen, M.; Cai, He; Chin, Lip Ket; Huang, Jianguo; Gu, Y. D.; Radhakrishnan, K.; Ser, Wee; Liu, Ai Qun
 2011Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBESun, Z. Z.; Radhakrishnan, K.; Agrawal, M.; Dharmarasu, Nethaji
2014Reduction of Cu-rich interfacial layer and improvement of bulk CuO property through two-step sputtering for p-CuO/n-Si heterojunction solar cellMasudy-Panah, Saeid; Dalapati, Goutam Kumar; Radhakrishnan, K.; Kumar, Avishek; Tan, Hui Ru
2013Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111)Ravikiran, L.; Radhakrishnan, K.; Agrawal, M.; Munawar Basha, S.; Dharmarasu, Nethaji