Browsing by Author Radhakrishnan, K.

Or, select a letter below to browse by last name
0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Showing results 1 to 20 of 30  next >
Issue DateTitleAuthor(s)
2000Characterization of InP based high electron mobility transistor structures grown by solid source MBEToo, Patrick Heng Kwee.
 2012Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si(111) by ammonia molecular beam epitaxyDharmarasu, Nethaji; Radhakrishnan, K.; Agrawal, M.; Ravikiran, Lingaparthi; Arulkumaran, Subramaniam; Lee, Kenneth E.; Ing, Ng Geok
2003Development of deep submicron HEMT MMIC for millimetre-wave applicationsNg, Geok Eng; Yuan, Xiaocong; Yoon, Soon Fatt; Radhakrishnan, K.; Law, Choi Look; Ooi, Boon Siew; Prasad Krishnamachar
2002Development of high dielectric constant SrTiO3 thin filmsLoo, Martin Chih Chien.
2002Development of phosphorus containing compound semiconductor hetero-structures for high-speed applicationsZheng, Haiqun.
1997Development of thin film structures for heterojunction bipolar transistors (HBTs)Radhakrishnan, K.; Yoon, Soon Fatt.; Tse, Man Siu.
2002Dry plasma etching of III-V semiconductors for monolithic microwave integrated circuits fabricationChen, Yuwen.
 2022Effects of Si doping well beyond the Mott transition limit in GaN epilayers grown by plasma-assisted molecular beam epitaxyLingaparthi, R.; Dharmarasu, Nethaji; Radhakrishnan, K.; Zheng, Y.
2009Extraction of diffusion length using junction-less EBICOng, Vincent K. S.; Tan, Chee Chin.; Radhakrishnan, K.
2001Fabrication and characterization of high frequency devices for monolithic microwave integrated circuits (MMICS)Lau, Kien Mun.
2003Fabrication and characterization of microelectronic devices, circuits and systems VIRadhakrishnan, K.
2007Fabrication of vertical side-wall submicron emitter for heterojunction bipolar transistorsRadhakrishnan, K.; Wang, Hong
2011Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBEAgrawal, M.; Radhakrishnan, K.; Sun, Z. Z.; Dharmarasu, Nethaji
2015Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxyRavikiran, L.; Dharmarasu, N.; Radhakrishnan, K.; Agrawal, M.; Yiding, Lin; Arulkumaran, S.; Vicknesh, S.; Ng, G. I.
2003Growth and characterization of metamorphic layer structures for high electron mobility transistorsYuan, Kaihua.
 2020In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applicationsLingaparthi, R.; Dharmarasu, Nethaji; Radhakrishnan, K.; Agrawal, Manvi
 2019Mid-infrared GaN/AlGaN quantum cascade detector grown on siliconDror, Ben; Zheng, Yuanjin; Agrawal, M.; Radhakrishnan, K.; Orenstein, Meir; Bahir, Gad
2002Monolithic integration of heterojunction bipolar transistors and high electron mobility transistorsRadhakrishnan, K.; Ng, Geok Ing.; Yoon, Soon Fatt.
 2021Non-linear thermal resistance model for the simulation of high power GaN-based devicesGarciá-Sánchez, S.; Iñiguez-de-la-Torre, I.; Pérez, S.; Ranjan, Kumud; Agrawal, Manvi; Lingaparthi, R.; Dharmarasu, Nethaji; Radhakrishnan, K.; Arulkumaran, Subramaniam; Ng, Geok Ing; González, T.; Mateos, J.
2015Optical bandgap widening and phase transformation of nitrogen doped cupric oxideMasudy-Panah, Saeid; Radhakrishnan, K.; Kumar, Avishek; Wong, Ten It; Yi, Ren; Dalapati, Goutam Kumar