Browsing by Author
Rajan, S.
Showing results 1 to 2 of 2
| Issue Date | Title | Author(s) |
| 2015 | Electron velocity of 6 × 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors | Arulkumaran, S.; Ng, G. I.; Manoj Kumar, C. M.; Ranjan, K.; Teo, K. L.; Shoron, O. F.; Rajan, S.; Bin Dolmanan, S.; Tripathy, S. |
| 2014 | In0.17Al0.83N/AlN/GaN triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03A/mm, IOFF=1.13 μA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V | Teo, Khoon Leng; Ng, Geok Ing; Ranjan, Kumud; Shoron, O. F.; Arulkumaran, Subramaniam; Rajan, S.; Dolmanan, S. B.; Manoj Kumar, Chandra Mohan; Tripathy, S. |