Browsing by Author Ranjan, K.

Showing results 1 to 5 of 5
Issue DateTitleAuthor(s)
2015Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)Anand, M. J.; Ng, G. I.; Arulkumaran, S.; Manoj Kumar, C. M.; Ranjan, K.; Vicknesh, S.; Foo, S. C.; Syamal, B.; Zhou, X.
2015Electron velocity of 6 × 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistorsArulkumaran, S.; Ng, G. I.; Manoj Kumar, C. M.; Ranjan, K.; Teo, K. L.; Shoron, O. F.; Rajan, S.; Bin Dolmanan, S.; Tripathy, S.
 2012GaN-on-Silicon integration technologyNg, Geok Ing; Arulkumaran, Subramaniam; Vicknesh, Sahmuganathan; Wang, H.; Ang, K. S.; Kumar, C. M. Manoj; Ranjan, K.; Lo, Guo-Qiang; Tripathy, Sudhiranjan; Boon, Chirn Chye; Lim, Wei Meng
2014High-frequency microwave noise characteristics of InAlN/GaN high-electron mobility transistors on Si (111) substrateArulkumaran, Subramaniam; Ranjan, K.; Ng, G. I.; Manoj Kumar, C. M.; Vicknesh, S.; Dolmanan, S. B.; Tripathy, S.
 2013Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stackAnand, M. J.; Ng, G. I.; Vicknesh, S.; Arulkumaran, Subramaniam; Ranjan, K.