Browsing by Author Ranjan, Kumud

Showing results 1 to 6 of 6
Issue DateTitleAuthor(s)
2013Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal-oxide-semiconductor-compatible non-gold metal stackArulkumaran, Subramaniam; Ng, Geok Ing; Vicknesh, Sahmuganathan; Wang, Hong; Ang, Kian Siong; Kumar, Chandramohan Manoj; Teo, Khoon Leng; Ranjan, Kumud
2019GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substratesDeki, M.; Nitta, S.; Honda, Y.; Amano, H.; Sandupatla, Abhinay; Arulkumaran, Subramanian; Ng, Geok Ing; Ranjan, Kumud
 2014High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on siliconRanjan, Kumud; Arulkumaran, Subramaniam; Ng, Geok Ing; Vicknesh, Sahmuganathan
 2014In0.17Al0.83N/AlN/GaN triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03A/mm, IOFF=1.13 μA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 VTeo, Khoon Leng; Ng, Geok Ing; Ranjan, Kumud; Shoron, O. F.; Arulkumaran, Subramaniam; Rajan, S.; Dolmanan, S. B.; Manoj Kumar, Chandra Mohan; Tripathy, S.
2017Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiNLi, Yang; Ng, Geok Ing; Arulkumaran, Subramaniam; Ye, Gang; Liu, Zhi Hong; Ranjan, Kumud; Ang, Kian Siong
2015Record low contact resistance for InAlN/GaN HEMTs on Si with non-gold metalArulkumaran, Subramaniam; Ng, Geok Ing; Ranjan, Kumud; Kumar, Chandra Mohan Manoj; Foo, Siew Chuen; Ang, Kian Siong; Vicknesh, Sahmuganathan; Dolmanan, Surani Bin; Bhat, Thirumaleshwara; Tripathy, Sudhiranjan