Browsing by Author Son, Bongkwon
Showing results 1 to 12 of 12
| Issue Date | Title | Author(s) | |
|---|---|---|---|
 | 2020 | Dark current analysis of germanium-on-insulator vertical p-i-n photodetectors with varying threading dislocation density | Son, Bongkwon; Lin, Yiding; Lee, Kwang Hong; Chen, Qimiao; Tan, Chuan Seng |
| 2021 | Effects of high-temperature thermal annealing on GeSn thin-film material and photodetector operating at 2 µm | Wu, Shaoteng; Son, Bongkwon; Zhang, Lin; Chen, Qimiao; Zhou, Hao; Goh, Simon Chun Kiat; Tan, Chuan Seng |
 | 2020 | High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation | Son, Bongkwon; Lin, Yiding; Lee, Kwang Hong; Wang, Yue; Wu, Shaoteng; Tan, Chuan Seng |
| 2020 | High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm | Zhou, Hao; Xu, Shengqiang; Lin, Yiding; Huang, Yi-Chiau; Son, Bongkwon; Chen, Qimiao; Guo, Xin; Lee, Kwang Hong; Goh, Simon Chun-Kiat; Gong, Xiao; Tan, Chuan Seng |
| 2020 | Insights into the origins of guided microtrenches and microholes/rings from Sn segregation in germanium–tin epilayers | Wu, Shaoteng; Zhang, Lin; Son, Bongkwon; Chen, Qimiao; Zhou, Hao; Tan, Chuan Seng |
| 2021 | Low-power and high-detectivity Ge photodiodes by in-situ heavy As doping during Ge-on-Si seed layer growth | Lin, Yiding; Lee, Kwang Hong; Son, Bongkwon; Tan, Chuan Seng |
| 2020 | Metal-semiconductor-metal GeSn photodetectors on silicon for short-wave infrared applications | Ghosh, Soumava; Lin, Kuan-Chih; Tsai, Cheng-Hsun; Kumar, Harshvardhan; Chen, Qimiao; Zhang, Lin; Son, Bongkwon; Tan, Chuan Seng; Kim, Munho; Mukhopadhyay, Bratati; Chang, Guo-En |
| 2021 | Monolithic Germanium-tin pedestal waveguide for mid-infrared applications | Goh, Simon Chun Kiat; Shiau, Li Lynn; Zhang, Lin; Son, Bongkwon; Chen, Qimiao; Zhong, Jian; Salim, Teddy; Tan, Chuan Seng |
| 2020 | Photo detection and modulation from 1,550 to 2,000 nm realized by GeSn/Ge multiple-quantum-well photodiode on 300-mm Si substrate | Zhou, Hao; Xu, Shengqiang; Wu, Shaoteng; Huang, Yi-Chiau; Zhao, Peng; Tong, Jinchao; Son, Bongkwon; Guo, Xin; Zhang, Dao Hua; Gong, Xiao; Tan, Chuan Seng |
| 2020 | Resonant-cavity-enhanced responsivity in germanium-on-insulator photodetectors | Ghosh, Soumava; Lin, Kuan-Chih; Tsai, Cheng-Hsun; Lee, Kwang Hong; Chen, Qimiao; Son, Bongkwon; Mukhopadhyay, Bratati; Tan, Chuan Seng; Chang, Guo-En |
| 2021 | Sub-mA/cm² dark current density, buffer-less Germanium (Ge) photodiodes on a 200-mm Ge-on-insulator substrate | Lin, Yiding; Son, Bongkwon; Lee, Kwang Hong; Michel, Jurgen; Tan, Chuan Seng | |
| 2021 | Surface plasmon enhanced GeSn photodetectors operating at 2 μm | Zhou, Hao; Zhang, Lin; Tong, Jinchao; Wu, Shaoteng; Son, Bongkwon; Chen, Qimiao; Zhang, Dao Hua; Tan, Chuan Seng |