Browsing by Author Syamal, Binit

Showing results 1 to 7 of 7
Issue DateTitleAuthor(s)
2014Compact model characteristics for generic MIS-HEMTsChiah, Siau Ben; Ajaykumar, Arjun; Liu, Xu; Syamal, Binit; Zhou, Hong Tao; Zhou, Xing
 2014A Compact Model for Generic MIS-HEMTs Based on the Unified 2DEG Density ExpressionZhang, Junbin; Syamal, Binit; Zhou, Xing; Arulkumaran, Subramaniam; Ng, Geok Ing
 2017Impact of Subthreshold Carrier Statistics on the Low-Frequency Noise in MOSFETsAjaykumar, Arjun; Zhou, Xing; Chiah, Siau Beh; Syamal, Binit
 2015A New Threshold Voltage and Drain Current Model for Lightly/Heavily Doped Surrounding Gate MOSFETsDutta, Pradipta; Syamal, Binit; Koley, Kalyan; Mohankumar, N.; Sarkar, C. K.
2017Short-channel drain current model for asymmetric heavily / lightly doped DG MOSFETsDutta, Pradipta; Syamal, Binit; Koley, Kalyan; Dutta, Arka; Sarkar, C. K.
 2012Subthreshold analog/RF performance of underlap DG FETs with asymmetric source/drain extensionsKoley, Kalyan; Syamal, Binit; Kundu, Atanu; Mohankumar, N.; Sarkar, C.K.
 2012Unified regional modeling of GaN HEMTs with the 2DEG and DD formalismZhang, Junbin; Syamal, Binit; Zhou, Xing; Chiah, Siau Ben; Zhou, Hongtao; Yuan, Li