Browsing by Author Teo, K. L.
Showing results 1 to 4 of 4
Issue Date | Title | Author(s) | |
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2013 | The Effect of Intrinsic Defects on Resistive Switching Based on p–n Heterojunction | Zheng, K.; Sun, Xiao Wei; Teo, K. L. | |
![]() | 2015 | Electron velocity of 6 × 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors | Arulkumaran, S.; Ng, G. I.; Manoj Kumar, C. M.; Ranjan, K.; Teo, K. L.; Shoron, O. F.; Rajan, S.; Bin Dolmanan, S.; Tripathy, S. |
![]() | 2012 | Resistive switching in a GaOx-NiOx p-n heterojunction | Sun, Xiaowei; Leck, Kheng Swee; Zheng, K.; Zhao, J. L.; Vinh, V. Q.; Zhao, R.; Yeo, Y. G.; Law, L. T.; Teo, K. L. |
![]() | 2014 | A ZnTaOx based resistive switching random access memory | Zheng, K.; Zhao, J. L.; Leck, K. S.; Teo, K. L.; Yeo, E. G.; Sun, X. W. |