Browsing by Author Tseng, Ampere A.
Showing results 1 to 4 of 4
|2006||Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams||Ng, Chi Yung; Chen, Tupei; Zhao, P.; Ding, Liang; Liu, Yang; Tseng, Ampere A.; Fung, Stevenson Hon Yuen|
|2006||Influence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structures||Tseng, Ampere A.; Liu, Yang; Chen, Tupei; Ng, Chi Yung; Ding, Liang; Tse, Man Siu; Fung, Stevenson Hon Yuen|
|2005||Influence of silicon-nanocrystal distribution in SiO2 matrix on charge injection and charge decay||Tseng, Ampere A.; Ng, Chi Yung; Chen, Tupei; Tse, Man Siu; Fung, Stevenson Hon Yuen; Lim, Vanissa Sei Wei|
|2006||Si ion-induced instability in flatband voltage of Si+ -implanted gate oxides||Chen, Q.; Zhao, P.; Tseng, Ampere A.; Ng, Chi Yung; Chen, Tupei; Ding, Liang; Liu, Yang; Fung, Stevenson Hon Yuen|