Browsing by Author Vicknesh, S.

Showing results 1 to 5 of 5
Issue DateTitleAuthor(s)
2015Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)Anand, M. J.; Ng, G. I.; Arulkumaran, S.; Manoj Kumar, C. M.; Ranjan, K.; Vicknesh, S.; Foo, S. C.; Syamal, B.; Zhou, X.
2015Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxyRavikiran, L.; Dharmarasu, N.; Radhakrishnan, K.; Agrawal, M.; Yiding, Lin; Arulkumaran, S.; Vicknesh, S.; Ng, G. I.
 2011High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on siliconVicknesh, S.; Ng, G. I.; Liu, Z. H.; Selvaraj, S. L.; Egawa, T.; Arulkumaran, Subramaniam
2014High-frequency microwave noise characteristics of InAlN/GaN high-electron mobility transistors on Si (111) substrateArulkumaran, Subramaniam; Ranjan, K.; Ng, G. I.; Manoj Kumar, C. M.; Vicknesh, S.; Dolmanan, S. B.; Tripathy, S.
 2013Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stackAnand, M. J.; Ng, G. I.; Vicknesh, S.; Arulkumaran, Subramaniam; Ranjan, K.