| Issue Date | Title | Author(s) |
 | 2002 | Comparison of nitrogen compositions in the as-grown GaN[sub x]As[sub 1−x] on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy | Fan, Weijun; Yoon, Soon Fatt; Ng, T. K.; Wang, S. Z.; Loke, Wan Khai; Liu, R.; Wee, A. |
| 2002 | Effect of In and N incorporation on the properties of lattice-matched GaInNAs/GaAs grown by radio frequency plasma-assisted solid-source molecular beam epitaxy | Loke, Wan Khai; Yoon, Soon Fatt; Ng, T. K.; Wang, S. Z.; Fan, Weijun |
| 2002 | Improved GaN[sub x]As[sub 1−x] quality grown by molecular beam epitaxy with dispersive nitrogen source | Wang, S. Z.; Yoon, Soon Fatt; Loke, Wan Khai; Ng, T. K.; Fan, Weijun |
| 2007 | Interdiffusion in narrow InGaAsN∕GaAs quantum wells | Liu, W.; Zhang, Dao Hua; Huang, Z. M.; Wang, S. Z.; Yoon, Soon Fatt; Fan, Weijun; Liu, C. J.; Wee, A. T. S. |
| 2004 | Investigation of the optical properties of InGaAsN∕GaAs∕GaAsP multiple-quantum-well laser with 8-band and 10-band k[middle dot]p model | Ng, S. T.; Fan, Weijun; Yoon, Soon Fatt; Wang, S. Z.; Qu, Yi; Liu, C. Y.; Ma, S. G.; Yuan, Shu |
| 2002 | Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature | Ng, T. K.; Yoon, Soon Fatt; Wang, S. Z.; Loke, Wan Khai; Fan, Weijun |
| 2003 | Photoluminescence quenching mechanisms in GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxy | Ng, T. K.; Yoon, Soon Fatt; Fan, Weijun; Loke, Wan Khai; Wang, S. Z.; Ng, S. T. |
| 2004 | The role of nitrogen-nitrogen pairs in the deviation of the GaAsN lattice parameter from Vegard’s law | Wang, S. Z.; Yoon, Soon Fatt; Fan, Weijun; Loke, Wan Khai; Ng, T. K.; Wang, S. Z. |
| 2006 | Transverse electric dominant intersubband absorption in Si-doped GaInAsN∕GaAs quantum wells | Fan, Weijun; Yoon, Soon Fatt; Wang, S. Z.; Liu, H. C.; Zhang, Dao Hua; Liu, W.; Sun, L. |
