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Xing, Weichuan
Showing results 1 to 3 of 3
| Issue Date | Title | Author(s) |
| 2017 | InAlN/GaN HEMTs on Si With High fT of 250 GHz | Xing, Weichuan; Liu, Zhihong; Qiu, Haodong; Ranjan, Kumud; Gao, Yu; Ng, Geok Ing; Palacios, Tomás |
| 2018 | InAlN/GaN high electron mobility transistors on Si for RF applications | Xing, Weichuan |
| 2016 | Temperature dependent characteristics of InAlN/GaN HEMTs for mm-wave applications | Xing, Weichuan; Liu, Zhihong; Ng, Geok Ing; Palacios, Tomas |